AUIRF7343QTR

P1-P3 P4-P6 P7-P9 P10-P11

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AUIRF7343Q

4 2015-9-30

Fig 5. Normalized On-Resistance

Vs. Temperature

Fig 6. Typical On-Resistance Vs. Drain

Current



Fig 8. Maximum Avalanche Energy

Vs. Drain Current

Fig. 7 Typical On-Resistance Vs. Gate Voltage

N-Channel

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

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°

V =

I =

GS

D

10V

4.7A

25 50 75 100 125 150

0

40

80

120

160

200

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

J

AS

°

I

D

TOP

BOTTOM

2.1A

3.8A

4.7A

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AUIRF7343Q

5 2015-9-30

Fig 9. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 10. Typical Gate Charge Vs.

Gate-to-Source Voltage

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

N-Channel

1 10 100

0

200

400

600

800

1000

1200

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

DS

V

C

C

C

=

=

=

=

0V,

C

C

C

f = 1MHz

+ C

+ C

C SHORTED

GS

iss gs gd , ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0 10 20 30 40

0

4

8

12

16

20

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

G

GS

I =

D

4.5A

V = 12V

DS

V = 30V

DS

V = 48V

DS

0.1

1

10

100

0.0001 0.001 0.01 0.1 1 10 100

Not es:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJA A

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJA

0.01

0.02

0.05

0.10

0.20

D = 0. 50

SINGLE PULSE

(THERMAL RESPONSE)

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AUIRF7343Q

6 2015-9-30

P-Channel

Fig. 13 Typical Output Characteristics

Fig. 14 Typical Transfer Characteristics

Fig. 15 Typical Source-Drain Diode

Forward Voltage

Fig. 12 Typical Output Characteristics

1

10

100

3 4 5 6 7

V = -25V

20µs PULSE WIDTH

DS

-V , Gate-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

GS

D

T = 25 C

J

°

T = 150 C

J

°

0.1

1

10

100

0.2 0.4 0.6 0.8 1.0 1.2 1.4

-V ,Source-to-Drain Voltage (V)

-I , Reverse Drain Current (A)

SD

SD

V = 0 V

GS

T = 25 C

J

°

T = 150 C

J

°

P1-P3 P4-P6 P7-P9 P10-P11

AUIRF7343QTR

Mfr. #:

Buy AUIRF7343QTR

Manufacturer:

Infineon / IR

Description:

MOSFET AUTO 55V 1 N-CH HEXFET 3.8mOhms

Lifecycle:

New from this manufacturer.

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AUIRF7343QTR