IXFV36N50P Datasheet IXFH36N50P, IXFT36N50P, IXFV36N50P | P1-P3

Polar

TM

HiPerFET

TM

Power MOSFETs

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Features

z

Low Package Inductance

z

Fast Intrinsic Rectifier

z

Low R

DS(on)

and Q

G

Advantages

z

High Power Density

z

Easy to Mount

z

Space Savings

IXFV36N50PS

IXFV36N50P

IXFH36N50P

IXFT36N50P

V

DSS

= 500V

I

D25

= 36A

R

DS(on)

≤≤

≤ 170m

ΩΩ

Ω

t

rr

≤≤

≤ 200ns

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 500 V

V

DGR

T

J

= 25°C to 150°C, R

GS

= 1MΩ 500 V

V

GSS

Continuous ±30 V

V

GSM

Transient ±40 V

I

D25

T

C

= 25°C 36 A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

90 A

I

A

T

C

= 25°C 36A

E

AS

T

C

= 25°C 1.5 J

dv/dt I

S

≤ I

DM

, V

DD

≤ V

DSS

, T

J

≤ 150°C 10 V/ns

P

D

T

C

= 25°C 540 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6mm (0.062 in.) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10s 260 °C

M

d

Mounting Torque (TO-247) 1.13/10 Nm/lb.in.

F

C

Mounting Force (PLUS220) 20..120 /4.5..27 N/lb.

Weight PLUS220 4.0 g

TO-268 4.0 g

TO-247 6.0 g

G = Gate D = Drain

S = Source Tab = Drain

TO-268 (IXFT)

S

G

D (Tab)

TO-247 (IXFH)

G

S

D (Tab)

D

PLUS220SMD (IXFV...S)

G

S

D (Tab)

PLUS220 (IXFV)

G

D

S

D (Tab)

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 250μA 500 V

V

GS(th)

V

DS

= V

GS

, I

D

= 4mA 3.0 5.0 V

I

GSS

V

GS

= ±30V, V

DS

= 0V ±100 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 25 μA

T

J

= 125°C 500 μA

R

DS(on)

V

GS

= 10V, I

D

= 0.5 • I

D25

, Note 1 170 mΩ

IXFH36N50P IXFV36N50P

IXFT36N50P IXFV36N50PS

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 20V, I

D

= 0.5 • I

D25

, Note 1 23 36 S

C

iss

5500 pF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 510 pF

C

rss

40 pF

t

d(on)

25 ns

t

r

27 ns

t

d(off)

75 ns

t

f

21 ns

Q

g(on)

93 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

30 nC

Q

gd

31 nC

R

thJC

0.23 °C/W

R

thCS

(TO-247 & PLUS220) 0.25 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 36 A

I

SM

Repetitive, Pulse Width Limited by T

JM

144 A

V

SD

I

F

= I

S

, V

GS

= 0V, Note 1 1.5 V

t

rr

200 ns

Q

RM

0.8 μC

I

RM

8.0

A

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

R

G

= 3Ω (External)

I

F

= 25A, -di/dt = 100A/μs

V

R

= 100V, V

GS

= 0V

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

IXFH36N50P IXFV36N50P

IXFT36N50P IXFV36N50PS

PLUS220 (IXFV) Outline

PLUS220SMD (IXFV_S) Outline

TO-247 Outline

Terminals: 1 - Gate 2 - Drain

3 - Source

TO-268 Outline

Terminals: 1 - Gate 2,4 - Drain

3 - Source

e

∅ P

1 2 3

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

IXFV36N50P

IXFV36N50P

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