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IXFV36N50P

P1-P3P4-P6
IXFH36N50P IXFV36N50P
IXFT36N50P IXFV36N50PS
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
6
12
18
24
30
36
01234567
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6
V
5
V
4
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
0 5 10 15 20 25
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7
V
6.5
V
6
V
5
V
5.5
V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
6
12
18
24
30
36
0 2 4 6 8 10121416
V
DS
- Volts
I
D
- Amperes
5
V
4.5V
5.5V
V
GS
= 10V
7V
6
V
Fig. 4. R
DS(on)
Normalized to I
D
= 18A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 36A
I
D
= 18A
Fig. 5. R
DS(on)
Normalized to I
D
= 18A Value vs.
Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
0 1020304050607080
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
5
10
15
20
25
30
35
40
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
© 2011 IXYS CORPORATION, All Rights Reserved
IXFH36N50P IXFV36N50P
IXFT36N50P IXFV36N50PS
Fig. 7. Input Admittance
0
10
20
30
40
50
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
0 102030405060708090
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
10
20
30
40
50
60
70
80
90
100
0.30.40.50.60.70.80.91.01.11.2
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 102030405060708090100
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 250V
I
D
=18A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100µs
1ms
R
DS(on)
Limit
25µs
DC
10ms
IXFH36N50P IXFV36N50P
IXFT36N50P IXFV36N50PS
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_36N50P (7J) 7-15-11-E
Fig. 13. Maximum Transient Thermal Impedance
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 13. Maximum Transient Thermal Impedance
aaaa
0.4
P1-P3P4-P6

IXFV36N50P

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Buy IXFV36N50P
Manufacturer:
Description:
MOSFET N-CH 500V 36A PLUS220
Lifecycle:
New from this manufacturer.
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