TIP32BG Datasheet TIP31CG, TIP31AG, TIP31G | P1-P3

September, 2015 − Rev. 16

1 Publication Order Number:

TIP31A/D

TIP31G, TIP31AG, TIP31BG,

TIP31CG (NPN),

TIP32G,TIP32AG, TIP32BG,

TIP32CG(PNP)

Complementary Silicon

Plastic Power Transistors

Designed for use in general purpose amplifier and switching

applications.

Features

• High Current Gain − Bandwidth Product

• Compact TO−220 Package

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage

TIP31G, TIP32G

TIP31AG, TIP32AG

TIP31BG, TIP32BG

TIP31CG, TIP32CG

V

CEO

40

60

80

100

Vdc

Collector−Base Voltage

TIP31G, TIP32G

TIP31AG, TIP32AG

TIP31BG, TIP32BG

TIP31CG, TIP32CG

V

CB

40

60

80

100

Vdc

Emitter−Base Voltage V

EB

5.0 Vdc

Collector Current − Continuous I

C

3.0 Adc

Collector Current − Peak I

CM

5.0 Adc

Base Current I

B

1.0 Adc

Total Power Dissipation

@ T

C

= 25°C

Derate above 25°C

P

D

40

0.32

W

W/°C

Total Power Dissipation

@ T

A

= 25°C

Derate above 25°C

P

D

2.0

0.016

W

W/°C

Unclamped Inductive Load Energy

(Note 1)

E 32 mJ

Operating and Storage Junction Tem-

perature Range

T

J

, T

stg

–65 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. I

C

= 1.8 A, L = 20 mH, P.R.F. = 10 Hz, V

CC

= 10 V, R

BE

= 100 W

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

R

q

JA

62.5 °C/W

Thermal Resistance, Junction−to−Case

R

q

JC

3.125 °C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−220

CASE 221A

STYLE 1

MARKING DIAGRAM

3 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

40−60−80−100 VOLTS,

40 WATTS

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1

2

3

4

TIP3xx = Device Code

xx = 1, 1A, 1B, 1C,

2, 2A, 2B, 2C,

A = Assembly Location

Y = Year

WW = Work Week

G Pb−Free Package

TIP3xxG

AYWW

See detailed ordering and shipping information on page 6 o

f

this data sheet.

ORDERING INFORMATION

1

BASE

3

EMITTER

COLLECTOR

2,4

1

BASE

3

EMITTER

COLLECTOR

2,4

NPNPNP

TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,

TIP32CG (PNP)

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2

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted)

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

(I

C

= 30 mAdc, I

B

= 0)

TIP31G, TIP32G

TIP31AG, TIP32AG

TIP31BG, TIP32BG

TIP31CG, TIP32CG

V

CEO(sus)

40

60

80

100

−

Vdc

Collector Cutoff Current

(V

CE

= 30 Vdc, I

B

= 0)

TIP31G, TIP32G, TIP31AG, TIP32AG

(V

CE

= 60 Vdc, I

B

= 0)

TIP31BG, TIP31CG, TIP32BG, TIP32CG

I

CEO

−

0.3

mAdc

Collector Cutoff Current

(V

CE

= 40 Vdc, V

EB

= 0)

TIP31G, TIP32G

(V

CE

= 60 Vdc, V

EB

= 0)

TIP31AG, TIP32AG

(V

CE

= 80 Vdc, V

EB

= 0)

TIP31BG, TIP32BG

(V

CE

= 100 Vdc, V

EB

= 0)

TIP31CG, TIP32CG

I

CES

−

200

mAdc

Emitter Cutoff Current

(V

BE

= 5.0 Vdc, I

C

= 0)

I

EBO

− 1.0

mAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain

(I

C

= 1.0 Adc, V

CE

= 4.0 Vdc)

(I

C

= 3.0 Adc, V

CE

= 4.0 Vdc)

h

FE

25

10

−

50

−

Collector−Emitter Saturation Voltage

(I

C

= 3.0 Adc, I

B

= 375 mAdc)

V

CE(sat)

− 1.2

Vdc

Base−Emitter On Voltage

(I

C

= 3.0 Adc, V

CE

= 4.0 Vdc)

V

BE(on)

− 1.8

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(I

C

= 500 mAdc, V

CE

= 10 Vdc, f

test

= 1.0 MHz)

f

T

3.0 −

MHz

Small−Signal Current Gain

(I

C

= 0.5 Adc, V

CE

= 10 Vdc, f = 1.0 kHz)

h

fe

20 −

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,

TIP32CG (PNP)

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3

Figure 1. Power Derating

T, TEMPERATURE (°C)

0 100

0

1.0

160

2.0

3.0

60

80

40 140

4.0

TURN−ON PULSE

APPROX

+11 V

V

in

0

V

EB(off)

t

1

APPROX

+11 V

V

in

t

2

TURN−OFF PULSE

t

3

t

1

≤ 7.0 ns

100 < t

2

< 500 ms

t

3

< 15 ns

DUTY CYCLE ≈ 2.0%

APPROX −9.0 V

R

B

and R

C

VARIED TO OBTAIN DESIRED CURRENT LEVELS.

SCOPE

R

C

R

B

V

CC

V

in

C

jd

<< C

eb

−4.0 V

Figure 2. Switching Time Equivalent Circuit

0.03

Figure 3. Turn−On Time

I

C

, COLLECTOR CURRENT (AMP)

0.02

0.1 3.0

0.07

1.0

I

C

/I

B

= 10

T

J

= 25°C

t

r

@ V

CC

= 10 V

0.5

0.3

0.1

0.05

0.05 0.3 0.5

t

d

@ V

EB(off)

= 2.0 V

0.03

0.7

2.0

t

r

@ V

CC

= 30 V

20 120

T

C

T

A

0

10

20

30

40

T

C

T

A

P

D

, POWER DISSIPATION (WATTS)

t, TIME (ms)

TIP32BG

TIP32BG

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