TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,
TIP32CG (PNP)
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4
t, TIME (ms)
1.0
0.01
0.01
0.1
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 1.0 100
Z
q
JC(t)
= r(t) R
q
JC
R
q
JC
(t) = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
q
JC(t)
P
(pk)
t
1
t
2
SINGLE PULSE
1.0 k
D = 0.5
0.05
DUTY CYCLE, D = t
1
/t
2
Figure 4. Thermal Response
0.1
0.05
0.03
0.02
0.07
0.5
0.3
0.2
0.7
0.02 0.05 0.2 0.5 2.0 5.0 200 50010 20 50
0.2
0.02
0.01
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
10 205.0 50 100
Figure 5. Active Region Safe Operating Area
0.2
0.1
0.5
SECONDARY BREAKDOWN
LIMITED @ T
J
≤ 150°C
THERMAL LIMIT @ T
C
= 25°C
(SINGLE PULSE)
BONDING WIRE LIMIT
1.0ms
100ms
2.0
1.0
10
5.0
I
C
, COLLECTOR CURRENT (AMP)
5.0ms
CURVES APPLY
BELOW RATED V
CEO
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150°C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
≤ 150°C. T
J(pk)
may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
0.05 0.1 0.2 0.70.03 0.3 0.50.07
I
C
, COLLECTOR CURRENT (AMP)
Figure 6. Turn−Off Time
3.0
t, TIME (s)μ
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
1.0 2.0 3.0 0.2 0.5 1.0 5.00.1 2.0 3.00.3
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
300
CAPACITANCE (pF)
200
100
70
50
30
10 20 4030
t
f
@ V
CC
= 30 V
t
f
@ V
CC
= 10 V
t
s
′
I
B1
= I
B2
I
C
/I
B
= 10
t
s
′ = t
s
- 1/8 t
f
T
J
= 25°C
T
J
= +25°C
C
eb
C
cb
