ZXMN2B14FH
Issue 2 - March 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction
temperature.
Parameter Symbol Limit Unit
Drain-source voltage V
DSS
20 V
Gate-source voltage V
GS
± 8 V
Continuous drain current @ V
GS
= 4.5V; T
amb
=25°C (b) I
D
4.3 A
@ V
GS
= 4.5V; T
amb
=70°C (b) 3.5
@ V
GS
= 4.5V; T
amb
=25°C (a) 3.5
Pulsed drain current (c) I
DM
21 A
Continuous source current (body diode) (b) I
S
2.4 A
Pulsed source current (body diode) (c) I
SM
21 A
Power dissipation at T
amb
=25°C (a) P
D
1W
Linear derating factor 8 mW/°C
Power dissipation at T
amb
=25°C (b) P
D
1.5 W
Linear derating factor 12 mW/°C
Operating and storage temperature range T
j
, T
stg
-55 to +150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient R
⍜JA
125 °C/W
Junction to ambient R
⍜JA
82 °C/W
