ZXMN2B14FH
Issue 2 - March 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown voltage V
(BR)DSS
20 V I
D
= 250A, V
GS
=0V
Zero gate voltage drain current I
DSS
1 AV
DS
= 20V, V
GS
=0V
Gate-body leakage I
GSS
100 nA V
GS
=±8V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
0.4 1.0 V I
D
= 250A, V
DS
=V
GS
Static drain-source on-state
resistance
(*)
(*) Measured under pulsed conditions. Pulse width ⱕ300s; duty cycle ⱕ2%.
R
DS(on)
0.055 ⍀ V
GS
= 4.5V, I
D
= 3.5A
0.075 ⍀ V
GS
= 2.5V, I
D
= 3A
0.100 ⍀ V
GS
= 1.8V, I
D
= 2.6A
Forward transconductance
(*)
(‡)
g
fs
11 S V
DS
= 10V, I
D
= 3.5A
Dynamic
(‡)
Input capacitance C
iss
872 pF V
DS
= 10V, V
GS
=0V
f=1MHz
Output capacitance C
oss
145 pF
Reverse transfer capacitance C
rss
90 pF
Switching
(†)
(‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on-delay time t
d(on)
3.7 ns V
DD
= 10V, V
GS
= 4.5V
I
D
= 1A
R
G
≈
6.0⍀
Rise time t
r
5.2 ns
Turn-off delay time t
d(off)
30 ns
Fall time t
f
5.5 ns
Total gate charge Q
g
11 nC V
DS
= 10V, V
GS
= 4.5V
I
D
= 4.0A
Gate-source charge Q
gs
1.4 nC
Gate drain charge Q
gd
2.1 nC
Source-drain diode
Diode forward voltage
(*)
V
SD
0.69 0.95 V T
j
=25°C, I
S
= 1.45A,
V
GS
=0V
Reverse recovery time
(‡)
t
rr
9.4 ns T
j
=25°C, I
F
= 2.4A,
di/dt=100A/s
Reverse recovery charge
(‡)
Q
rr
2.8 nC
