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NVB5426NT4G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 1
1 Publication Order Number:
NTB5426N/D
NTB5426N, NTP5426N,
NVB5426N
Power MOSFET
120 Amps, 60 Volts
N-Channel D
2
PAK, TO-220
Features
• Low R
DS(on)
• High Current Capability
• Avalanche Energy Specified
• AEC Q101 Qualified − NVB5426N
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (T
J
= 25°C Unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 V
Gate−to−Source Voltage − Continuous V
GS
$20 V
Gate−to−Source Voltage − Nonrepetitive
(T
P
< 10 ms)
V
GS
30 V
Continuous Drain
Current R
q
JC
(Note 1)
Steady
State
T
C
= 25°C
I
D
120
A
T
C
= 100°C 85
Power Dissipation
R
q
JC
(Note 1)
Steady
State
T
C
= 25°C P
D
215 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
260 A
Operating and Storage Temperature Range T
J
, T
stg
−55 to
+175
°C
Source Current (Body Diode) I
S
60 A
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 50 V
dc
, V
GS
= 10 V
dc
, I
L(pk)
= 70 A,
L = 0.3 mH, R
G
= 25 W)
E
AS
735 mJ
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
T
L
260 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Case (Drain)
Steady State (Note 1)
R
q
JC
0.7 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
http://onsemi.com
TO−220AB
CASE 221A
STYLE 5
1
2
3
4
MARKING DIAGRAMS
& PIN ASSIGNMENTS
G = Pb−Free Device
A = Assembly Location
Y = Year
WW = Work Week
5426N
AYWW
1
Gate
3
Source
4
Drain
2
Drain
1
Gate
3
Source
4
Drain
2
Drain
1
2
3
4
D
2
PAK
CASE 418B
STYLE 2
5426N
AYWW
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
V
(BR)DSS
R
DS(ON)
MAX
I
D
MAX
(Note 1)
60 V
6.0 mW @ 10 V
120 A
N−Channel
D
S
G
NTB5426N, NTP5426N, NVB5426N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C Unless otherwise specified)
Characteristics
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 mA
60 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
64 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V
V
DS
= 60 V
T
J
= 25°C 1.0 mA
T
J
= 150°C 25
Gate−Body Leakage Current I
GSS
V
DS
= 0 V, V
GS
= $20 V $100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(th)
V
GS
= V
DS
, I
D
= 250 mA
2.0 3.1 4.0 V
Negative Threshold Temperature Coefficient V
GS(th)
/T
J
9.2 mV/°C
Drain−to−Source On Voltage V
DS(on)
V
GS
= 10 V, I
D
= 60 A 0.3 0.36
V
V
GS
= 10 V, I
D
= 60 A, 150°C 0.6
Static Drain−to−Source On−Resistance R
DS(on)
V
GS
= 10 V, I
D
= 60 A 4.9 6.0
mW
Forward Transconductance g
FS
V
DS
= 15 V, I
D
= 20 A 65 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
iss
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
5800
pF
Output Capacitance C
oss
1000
Transfer Capacitance C
rss
370
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 48 V,
I
D
= 60 A
150 170
nC
Threshold Gate Charge Q
G(TH)
6.0
Gate−to−Source Charge Q
GS
28
Gate−to−Drain Charge Q
GD
67
SWITCHING CHARACTERISTICS, V
GS
= 10 V (Note 3)
Turn−On Delay Time
t
d(on)
V
GS
= 10 V, V
DD
= 48 V,
I
D
= 60 A, R
G
= 3.0 W
15
ns
Rise Time t
r
100
Turn−Off Delay Time t
d(off)
105
Fall Time t
f
95
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V
I
S
= 60 A
T
J
= 25°C 0.88 1.1
V
dc
T
J
= 100°C 0.78
Reverse Recovery Time t
rr
I
S
= 60 A
dc
, V
GS
= 0 V
dc
,
dI
S
/dt = 100 A/ms
75
ns
Charge Time t
a
50
Discharge Time t
b
25
Reverse Recovery Stored Charge Q
RR
235
mC
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device Package Shipping
†
NTP5426N TO−220AB (Pb−Free) 50 Units / Rail
NTB5426NT4G D
2
PAK (Pb−Free) 800 / Tape & Reel
NVB5426NT4G D
2
PAK (Pb−Free) 800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTB5426N, NTP5426N, NVB5426N
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
543210
0
40
80
120
160
240
763
0
40
80
120
200
240
Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
10765
0.004
0.005
0.007
1309070503010
0.004
0.005
0.006
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.5
1.0
1.5
5040302010
100
1000
10,000
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RES-
ISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
V
GS
= 4.6 V
5.0 V
T
J
= 125°C
T
J
= −55°C
T
J
= 25°C
V
DS
≥ 10 V
0.006
0.011
I
D
= 60 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
T
J
= 25°C
I
D
= 60 A
V
GS
= 10 V
175 60
V
GS
= 0 V
T
J
= 125°C
T
J
= 150°C
200
T
J
= 25°C
45
89 110
V
GS
= 10 V
0.008
0.009
0.010
2.0
2.5
5.4 V
5.8 V
6.0 V
6.2 V
6.4 V
6.6 V
10 V
160
150 55545352515
P1-P3P4-P6P7-P7

NVB5426NT4G

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Manufacturer:
ON Semiconductor
Description:
RF Bipolar Transistors MOSFET AUTOMOTIVE MOSFET
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