NTB5426N, NTP5426N, NVB5426N
http://onsemi.com
4
TYPICAL CHARACTERISTICS
C
rss
Q2
Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total
Charge
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) Q
G
, TOTAL GATE CHARGE (nC)
3020100
0
6000
15050250
0
2.0
4.0
8.0
10
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
100101.0
1.0
10
1000
0.80.70.60.5
0
20
40
80
100
120
C, CAPACITANCE (pF)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
60
2000
4000
V
GS
= 0 V
T
J
= 25°C
C
iss
C
oss
6.0
QT
Q1
T
J
= 25°C
I
D
= 60 A
V
DS
= 48 V
V
DD
= 48 V
I
D
= 60 A
V
GS
= 10 V
t
d(off)
t
d(on)
t
r
t
f
1.00.9
V
GS
= 0 V
T
J
= 25°C
60
100
10,000
8000
12,000
12575 100
40 50
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) T
J
, STARTING JUNCTION TEMPERATURE (°C)
100101
0.1
10
1000
100755025
0
200
600
800
I
D
, DRAIN CURRENT (A)
AVALANCHE ENERGY (mJ)
V
GS
= 10 V
Single Pulse
T
C
= 25°C
10 ms
175125
I
D
= 70 A
400
100
0.1
1
R
DS(on)
Limit
Thermal Limit
Package Limit
100 ms
1 ms
10 ms
dc
150
