© Semiconductor Components Industries, LLC, 2015
August, 2017 − Rev. P3
1 Publication Order Number:
NVMFD5C674NL/D
NVMFD5C674NL
Power MOSFET
60 V, 14.4 mW, 42 A, Dual N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
DS(on)
to Minimize Conduction Losses
• Low Q
G
and Capacitance to Minimize Driver Losses
• NVMFD5C674NLWF − Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JC
(Notes 1, 2, 3)
Steady
State
T
C
= 25°C
I
D
42
A
T
C
= 100°C 26
Power Dissipation
R
q
JC
(Notes 1, 2)
T
C
= 25°C
P
D
37
W
T
C
= 100°C 18
Continuous Drain
Current R
q
JA
(Notes 1, 2, 3)
Steady
State
T
A
= 25°C
I
D
11
A
T
A
= 100°C 7.5
Power Dissipation
R
q
JA
(Notes 1 & 2)
T
A
= 25°C
P
D
3.0
W
T
A
= 100°C 1.5
Pulsed Drain Current
T
A
= 25°C, t
p
= 10 ms
I
DM
119 A
Operating Junction and Storage Temperature T
J
, T
stg
−55 to
+ 175
°C
Source Current (Body Diode) I
S
44 A
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, I
L(pk)
= 1.6 A)
E
AS
61 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State
R
q
JC
2.86
°C/W
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
49
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
MARKING
DIAGRAM
www.onsemi.com
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
60 V
14.4 mW @ 10 V
42 A
20.4 mW @ 4.5 V
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
ORDERING INFORMATION
D1
D1
D2
D2
S1
G1
S2
G2
Dual N−Channel
D1
S1
G1
XXXXXX
AYWZZ
D2
D1
D2
S2
G2
D2
D1
DFN8 5x6
(SO8FL)
CASE 506BT
1
