NVMFD5C674NLWFT1G

NVMFD5C674NL
www.onsemi.com
4
TYPICAL CHARACTERISTICS
0.1
1
10
100
0.00001 0.0001 0.001 0.01
0.1
1
10
100
1000
0.1 1 10 100 1000
0.1
1
10
0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
10
100
1000
1 10 100
1
10
100
1,000
0 101520 303540
Figure 7. Capacitance Variation Figure 8. GatetoSource vs. Total Charge
V
DS
, DRAINTOSOURCE VOLTAGE (V) Q
G
, TOTAL GATE CHARGE (nC)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCETODRAIN VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. I
PEAK
vs. Time in Avalanche
V
DS
, DRAINTOSOURCE VOLTAGE (V) TIME IN AVALANCHE (s)
C, CAPACITANCE (pF)
V
GS
, GATETOSOURCE VOLTAGE (V)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
I
D
, DRAIN CURRENT (A)
I
PEAK
, (A)
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
C
ISS
C
OSS
C
RSS
V
DS
= 48 V
T
J
= 25°C
I
D
= 20 A
Q
GS
Q
GD
T
J
= 125°C
T
J
= 25°C
T
J
= 55°C
R
DS(on)
Limit
Thermal Limit
Package Limit
1 ms
10 ms
T
C
= 25°C
V
GS
10 V
Single Pulse
10 ms
0.5 ms
V
GS
= 0 V
T
J
(initial) = 100°C
T
J
(initial) = 25°C
0
1
2
3
4
5
6
7
8
9
10
012345678910
255
V
GS
= 4.5 V
V
DS
= 48 V
I
D
= 20 A
t
d(off)
t
d(on)
t
f
t
r
NVMFD5C674NL
www.onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device Marking Package Shipping
NVMFD5C674NLT1G 5C674L DFN8
(PbFree)
1500 / Tape & Reel
NVMFD5C674NLWFT1G 674LWF DFN8
(PbFree, Wettable Flanks)
1500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NVMFD5C674NL
www.onsemi.com
6
PACKAGE DIMENSIONS
DFN8 5x6, 1.27P Dual Flag (SO8FLDual)
CASE 506BT
ISSUE E
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.27
0.75
1.40
3.70
4.56
8X
PITCH
6.59
4.84
1.00
DIMENSION: MILLIMETERS
2.30
4X
0.70
5.55
4X
0.56
2X
2.08
2X
M 3.25
h −−−
3.50
−−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED
BETWEEN 0.15 AND 0.30 MM FROM THE TERMINAL TIP.
4. PROFILE TOLERANCE APPLIES TO THE EXPOSED PAD AS WELL
AS THE TERMINALS.
5. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED
AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST
POINT ON THE PACKAGE BODY.
7. A VISUAL INDICATOR FOR PIN 1 MUST BE LOCATED IN THIS AREA.
1234
56
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1
h
D
E
B
A
0.20 C
0.20 C
2X
2X
DIM MIN
MILLIMETERS
A 0.90
A1 −−−
b 0.33
c 0.20
D 5.15 BSC
D1 4.70
D2 3.90
E 6.15 BSC
E1 5.70
E2 3.90
e 1.27 BSC
G 0.45
K 0.51
L 0.48
A
0.10 C
0.10 C
14
8
e
8X
D2
b1
E2
b
A0.10 B
C
0.05
C
L
DETAIL A
A1
c
4X
5
MAX
−−−
−−−
0.42
−−−
4.90
4.10
5.90
4.15
0.55
−−−
0.61
M
N 1.80 2.00
78
N
PIN ONE
IDENTIFIER
NOTE 7
NOTE 4
C
SEATING
PLANE
DETAIL A
NOTE 6
4X
K
NOTE 3
D3 1.50 1.70
b1 0.33 0.42
4X
D3
G
4X
DETAIL B
DETAIL B
ALTERNATE
CONSTRUCTION
K1 0.56 −−−
K1
3.75
12
_
MAX
1.10
0.05
0.51
0.33
5.10
4.30
6.10
4.40
0.65
−−−
0.71
2.20
1.90
0.51
−−−
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NVMFD5C674NL/D
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NVMFD5C674NLWFT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET T6 60V LL S08FL DS
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