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IXXH50N60C3D1

P1-P3P4-P6P7-P7
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXH50N60C3D1
Fig. 11. Maximum Transient Thermal Impedance
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- ºC / W
Fig. 12. Maximum Transient Thermal Impedance
aa sss
0.4
Fig. 7. Transconductance
0
4
8
12
16
20
24
28
32
0 102030405060708090100
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC, 25ºC, 150ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
10
20
30
40
50
60
70
80
90
100
110
100 200 300 400 500 600
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 5
Ω
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 10203040506070
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 300V
I
C
= 36A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
ies
C
oes
C
res
Fig. 11. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
1 10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
10ms
V
CE(sat)
Limit
DC
100µs
© 2013 IXYS CORPORATION, All Rights Reserved
IXXH50N60C3D1
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
0.2
0.4
0.6
0.8
1.0
1.2
5 101520253035404550
R
G
- Ohms
E
off
- MilliJoules
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 150ºC , V
GE
= 15V
V
CE
= 360V
I
C
= 36A
I
C
= 54A
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
50
60
70
80
90
100
110
120
5 101520253035404550
R
G
- Ohms
t
f i
- Nanoseconds
0
50
100
150
200
250
300
350
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 150ºC,
V
GE
= 15V
V
CE
= 360V
I
C
= 36A
I
C
= 54A
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
0.1
0.2
0.3
0.4
0.5
0.6
0.7
18 22 26 30 34 38 42 46 50 54
I
C
- Amperes
E
off
- MilliJoules
0.0
0.5
1.0
1.5
2.0
2.5
3.0
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 5
Ω
,
V
GE
= 15V
V
CE
= 360V
T
J
= 150ºC
T
J
= 25ºC
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 5
Ω
,
V
GE
= 15V
V
CE
= 360V
I
C
= 36A
I
C
= 54A
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
0
20
40
60
80
100
120
140
160
18 22 26 30 34 38 42 46 50 54
I
C
- Amperes
t
f i
- Nanoseconds
40
50
60
70
80
90
100
110
120
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 360V
T
J
= 150ºC
T
J
= 25ºC
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
20
30
40
50
60
70
80
90
100
110
120
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
40
45
50
55
60
65
70
75
80
85
90
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 360V
I
C
= 54A
I
C
= 36A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXH50N60C3D1
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
0
10
20
30
40
50
60
70
80
90
18 22 26 30 34 38 42 46 50 54
I
C
- Amperes
t
r i
- Nanoseconds
21
22
23
24
25
26
27
28
29
30
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 360V
T
J
= 150ºC
T
J
= 25ºC
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
10
30
50
70
90
110
130
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
20
22
24
26
28
30
32
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 360V
I
C
= 54A
I
C
= 36A
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
30
40
50
60
70
80
90
100
110
120
130
140
5 101520253035404550
R
G
- Ohms
t
r i
- Nanoseconds
0
10
20
30
40
50
60
70
80
90
100
110
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 360V
I
C
= 54A
I
C
= 36A
P1-P3P4-P6P7-P7

IXXH50N60C3D1

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Description:
IGBT Transistors XPT IGBT C3-Class 600V/100Amp CoPacked
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