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MJD122T4G

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2013
September, 2016 − Rev. 15
1 Publication Order Number:
MJD122/D
MJD122, NJVMJD122
(NPN), MJD127,
NJVMJD127 (PNP)
Complementary Darlington
Power Transistor
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
• Surface Mount Replacements for 2N6040−2N6045 Series,
TIP120−TIP122 Series, and TIP125−TIP127 Series
• Monolithic Construction With Built−in Base−Emitter Shunt Resistors
• High DC Current Gain: h
FE
= 2500 (Typ) @ I
C
= 4.0 Adc
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings:
♦ Human Body Model, 3B > 8000 V
♦ Machine Model, C > 400 V
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
x = 2 or 7
G = Pb−Free Package
DPAK
CASE 369C
STYLE 1
AYWW
J12xG
SILICON
POWER TRANSISTOR
8 AMPERES
100 VOLTS, 20 WATTS
www.onsemi.com
COLLECTOR 2, 4
BASE
1
EMITTER 3
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
100 Vdc
Collector−Base Voltage V
CB
100 Vdc
Emitter−Base Voltage V
EB
5 Vdc
Collector Current
Continuous
Peak
I
C
8
16
Adc
Base Current I
B
120 mAdc
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
20
0.16
W
W/°C
Total Power Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
P
D
1.75
0.014
W
W/°C
Operating and Storage Junction Temperature Range T
J
, T
stg
−65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
6.25 °C/W
Thermal Resistance, Junction−to−Ambient (Note1)
R
q
JA
71.4 °C/W
1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 30 mAdc, I
B
= 0)
V
CEO(sus)
100 −
Vdc
Collector Cutoff Current
(V
CE
= 50 Vdc, I
B
= 0)
I
CEO
− 10
mAdc
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
I
CBO
− 10
mAdc
Emitter Cutoff Current
(V
BE
= 5 Vdc, I
C
= 0)
I
EBO
− 2
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 4 Adc, V
CE
= 4 Vdc)
(I
C
= 8 Adc, V
CE
= 4 Vdc)
h
FE
1000
100
12,000
−
−
Collector−Emitter Saturation Voltage
(I
C
= 4 Adc, I
B
= 16 mAdc)
(I
C
= 8 Adc, I
B
= 80 mAdc)
V
CE(sat)
−
−
2
4
Vdc
Base−Emitter Saturation Voltage (Note 2)
(I
C
= 8 Adc, I
B
= 80 mAdc)
V
BE(sat)
− 4.5
Vdc
Base−Emitter On Voltage
(I
C
= 4 Adc, V
CE
= 4 Vdc)
V
BE(on)
− 2.8
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain−Bandwidth Product
(I
C
= 3 Adc, V
CE
= 4 Vdc, f = 1 MHz)
|h
fe
|
4 −
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
MJD127, NJVMJD127
MJD122, NJVMJD122
C
ob
−
−
300
200
pF
Small−Signal Current Gain
(I
C
= 3 Adc, V
CE
= 4 Vdc, f = 1 kHz)
h
fe
300 −
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
Figure 1. Power Derating
25
25
T, TEMPERATURE (°C)
0
50 75 100 125 150
20
15
10
5
P
D
, POWER DISSIPATION (WATTS)
2.5
0
2
1.5
1
0.5
T
A
T
C
T
A
SURFACE
MOUNT
T
C
P1-P3P4-P6P7-P8

MJD122T4G

Mfr. #:
Buy MJD122T4G
Manufacturer:
ON Semiconductor
Description:
Darlington Transistors 8A 100V Bipolar Power NPN
Lifecycle:
New from this manufacturer.
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