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MJD122T4G

P1-P3P4-P6P7-P8
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
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4
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (AMP)
500
0.2
5000
2000
10,000
h
FE
, DC CURRENT GAIN
0.1 0.7
3000
0.5 1
20,000
1000
23 5
3
I
B
, BASE CURRENT (mA)
2.6
2.2
1.8
1.4
0.3 0.5 1 7352
1
I
C
, COLLECTOR CURRENT (AMP)
2
1.5
V, VOLTAGE (VOLTS)
3
2.5
1
0.5
0.2 30.1 0.70.3 1 5
10 20 30
200
300
0.3 7 10
0.7
0.5 7
2
1
0
PNP MJD127 NPN MJD122
I
C
, COLLECTOR CURRENT (AMP)
500
0.2
5000
2000
10,000
h
FE
, DC CURRENT GAIN
V
CE
= 4 V
T
J
= 150°C
7000
0.1 0.7
25°C
-55°C
3000
0.5 1
20,000
700
1000
23 5
3
I
B
, BASE CURRENT (mA)
2.6
2.2
1.8
1.4
0.3 0.5 1 735
4 A
I
C
= 2 A
2
T
J
= 25°C
1
I
C
, COLLECTOR CURRENT (AMP)
2
1.5
V, VOLTAGE (VOLTS)
3
2.5
1
0.5
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 250
V
BE
@ V
CE
= 4 V
V
CE(sat)
@ I
C
/I
B
= 250
0.2 30.1 0.70.3 1 5
10 20 30
Figure 2. DC Current Gain
Figure 3. Collector Saturation Region
Figure 4. “On” Voltages
200
300
0.3 7 10
0.7
0.5 7
2
10
6 A
V
CE
= 4 V
T
J
= 150°C
25°C
-55°C
T
J
= 25°C
4 A
I
C
= 2 A
6 A
T
J
= 25°C
V
BE
@ V
CE
= 4 V
V
BE(sat)
@ I
C
/I
B
= 250
V
CE(sat)
@ I
C
/I
B
= 250
TYPICAL ELECTRICAL CHARACTERISTICS
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
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5
V
, TEMPERATURE COEFFICIENTS (mV/ C)°θ
I
C
, COLLECTOR CURRENT (AMP)
0.2
*I
C
/I
B
≤ h
FE/3
0.1
-55°C to 25°C
123 10
10
4
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
10
-1
0+0.4
, COLLECTOR CURRENT (A)μI
C
10
3
10
2
10
1
10
0
-0.2 -0.4 -0.6
T
J
= 150°C
100°C
REVERSE
FORWARD
25°C
V
CE
= 30 V
10
5
+0.6 +0.2 -0.8 -1 -1.2 -1.4
10
4
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
10
-1
, COLLECTOR CURRENT (A)μI
C
10
3
10
2
10
1
10
0
10
5
+5
-5
q
VB
for V
BE
25°C to 150°C
q
VC
for V
CE(sat)
Figure 5. Temperature Coefficients
V
R
, REVERSE VOLTAGE (VOLTS)
C
ib
30
1 5 20 100
T
J
= 25°C
300
50
70
100
0.1 2 10 50
PNP
NPN
0.50.2
Figure 6. Collector Cut−Off Region
Figure 7. Small−Signal Current Gain
1
f, FREQUENCY (kHz)
100
210
500
5000
T
C
= 25°C
V
CE
= 4 Vdc
I
C
= 3 Adc
3000
55020 100
10,000
200
300
200 500 1000
PNP MJD127
NPN MJD122
-4
-3
-2
-1
0
+4
+3
+2
+1
0.50.3 75
I
C
, COLLECTOR CURRENT (AMP)
0.20.1 1 2 30.50.3 75
2000
1000
10
50
20
30
PNP
NPN
200
Figure 8. Capacitance
V
, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+5
-5
-4
-3
-2
-1
0
+4
+3
+2
+1
0.7 10
0-0.4 +0.2 +0.4 +0.6-0.6 -0.2 +0.8 +1 +1.2 +1.4
h
fe
, SMALL-SIGNAL CURRENT GAIN
C, CAPACITANCE (pF)
-55°C to 25°C
25°C to 150°C
*I
C
/I
B
≤ h
FE/3
25°C to 150°C
-55°C to 25°C
25°C to 150°C
-55°C to 25°C
*q
VC
for V
CE(sat)
q
VB
for V
BE
REVERSE
FORWARD
V
CE
= 30 V
T
J
= 150°C
100°C
25°C
C
ob
TYPICAL ELECTRICAL CHARACTERISTICS
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
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6
t, TIME OR PULSE WIDTH (ms)
1
0.01
100
0
0.3
0.2
0.07
r(t), EFFECTIVE TRANSIENT
R
q
JC(t)
= r(t) R
q
JC
R
q
JC
= 6.25°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.01
THERMAL RESISTANCE (NORMALIZED)
0.7
0.5
0.1
0.05
0.03
0.02
0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500
0.2
SINGLE PULSE
D = 0.5
0.05
0.1 0.5 30.3
0.2
0.7 1
5
I
C
, COLLECTOR CURRENT (AMP)
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25°C
t, TIME (s)μ
3
2
0.7
0.5
0.3
0.2
t
s
t
f
t
r
t
d
@ V
BE(off)
= 0 V
PNP
NPN
Figure 9. Switching Times Test Circuit Figure 10. Switching Times
0.1
1
10752
Figure 11. Thermal Response
V
2
A
PPROX
+8 V
0
≈ 8 k
SCOPE
V
CC
-30 V
R
C
51
FOR t
d
AND t
r
, D
1
IS DISCONNECTED
AND V
2
= 0
FOR
NPN
TEST
CIRCUIT
REVERSE
ALL
POLARITIES.
25 ms
t
r
, t
f
≤ 10 ns
DUTY CYCLE = 1%
+ 4 V
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
B
≈ 100 mA
MSD6100 USED BELOW I
B
≈ 100 mA
V
1
A
PPROX
-12 V
TUT
R
B
D
1
≈ 120
0.07
0.05
0.1
0.01
I
C
, COLLECTOR CURRENT (AMP)
5
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.3
100
5
2
0.5
0.2
BONDING WIRE LIMIT
THERMAL LIMIT
T
C
= 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
10 507
T
J
= 150°C
100m
σ
1ms
dc
0.1
1
3
15
20
3020 70
CURVES APPLY BELOW RATED V
CEO
5ms
Figure 12. Maximum Forward Bias
Safe Operating rea
321
10
0.05
0.02
0.03
500m
σ
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 12 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
< 150_C. T
J(pk)
may be calculated from the data in
Figure 11. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
P1-P3P4-P6P7-P8

MJD122T4G

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Buy MJD122T4G
Manufacturer:
ON Semiconductor
Description:
Darlington Transistors 8A 100V Bipolar Power NPN
Lifecycle:
New from this manufacturer.
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