NCV887302D1R2G

NCV8873
www.onsemi.com
4
ELECTRICAL CHARACTERISTICS (−40°C < T
J
< 150°C, 3.2 V < V
IN
< 40 V, unless otherwise specified) Min/Max values are
guaranteed by test, design or statistical correlation.
Characteristic
Symbol Conditions Min Typ Max Unit
GENERAL
Quiescent Current, Sleep Mode
I
q,sleep
V
IN
= 13.2 V, EN = 0, T
J
= 25°C 2.0
mA
Quiescent Current, Sleep Mode I
q,sleep
V
IN
= 13.2 V, EN = 0, −40°C < T
J
< 125°C 2.0 6.0
mA
Quiescent Current, No switching I
q,off
Into VIN pin, EN = 1, No switching 1.5 2.5 mA
Quiescent Current, Switching,
normal operation
I
q,on
Into VIN pin, EN = 1, Switching 4.0 6.0 mA
OSCILLATOR
Minimum pulse width
t
on,min
90 115 140 ns
Maximum duty cycle D
max
YY = 00
YY = 01
84
85
86.5
87.5
89
90
%
Switching frequency f
s
YY = 00
YY = 01
900
360
1000
400
1100
440
kHz
Soft−start time t
ss
From start of switching with V
FB
= 0 until
reference voltage = V
REF
YY = 00
YY = 01
1.3
3.3
1.6
4.0
1.9
4.7
ms
Soft−start delay t
ss,dly
From EN 1 until start of switching with
V
FB
= 0 with floating V
C
pin 240 280
ms
Slope compensating ramp S
a
YY = 00
YY = 01
114
25
130
30
146
35
mV/ms
ENABLE/SYNCHRONIZATION
EN/SYNC pull−down current
I
EN/SYNC
V
EN/SYNC
= 5 V 5.0 10
mA
EN/SYNC input high voltage V
s,ih
V
IN
> V
UVLO
2.0 5.0 V
EN/SYNC input low voltage V
s,il
0 800 mV
EN/SYNC time−out ratio %t
en
From SYNC falling edge, to oscillator con-
trol (EN high) or shutdown (EN low), Per-
cent of typical switching frequency
350 %
SYNC minimum frequency ratio %f
sync,min
Percent of f
s
80 %
SYNC maximum frequency f
sync,max
1.1 MHz
Synchronization delay t
s,dly
From SYNC falling edge to GDRV falling
edge under open loop conditions.
50 100 ns
Synchronization duty cycle D
sync
25 75 %
CURRENT SENSE AMPLIFIER
Low−frequency gain
A
csa
Input−to−output gain at dc, ISNS v 1 V 0.9 1.0 1.1 V/V
Bandwidth BW
csa
Gain of A
csa
− 3 dB 2.5 MHz
ISNS input bias current I
sns,bias
Out of ISNS pin 30 50
mA
Current limit threshold voltage V
cl
Voltage on ISNS pin
YY = 00
YY = 01
360
180
400
200
440
220
mV
Current limit,
Response time
t
cl
CL tripped until GDRV falling edge,
V
ISNS
= V
cl
(typ) + 60 mV
80 125 ns
Overcurrent protection,
Threshold voltage
%V
ocp
Percent of V
cl
125 150 175 %
Overcurrent protection,
Response Time
t
ocp
From overcurrent event, Until switching
stops, V
ISNS
= V
OCP
+ 40 mV
80 125 ns
NCV8873
www.onsemi.com
5
ELECTRICAL CHARACTERISTICS (−40°C < T
J
< 150°C, 3.2 V < V
IN
< 40 V, unless otherwise specified) Min/Max values are
guaranteed by test, design or statistical correlation.
Characteristic UnitMaxTypMinConditionsSymbol
VOLTAGE ERROR OPERATIONAL TRANSCONDUCTANCE AMPLIFIER
Transconductance
g
m,vea
V
FB
– V
ref
= ± 20 mV 0.8 1.2 1.63 mS
VEA output resistance R
o,vea
2.0
MW
VFB input bias current I
vfb,bias
Current out of VFB pin 0.5 2.0
mA
Reference voltage V
ref
0.194 0.200 0.206 V
VEA maximum output voltage V
c,max
2.5 V
VEA minimum output voltage V
c,min
0.3 V
VEA sourcing current I
src,vea
VEA output current, Vc = 2.0 V 80 100
mA
VEA sinking current I
snk,vea
VEA output current, Vc = 0.7 V 80 100
mA
GATE DRIVER
Sourcing current I
src
V
DRV
6 V, V
DRV
− V
GDRV
= 2 V
YY = 00
YY = 01
600
600
800
800
mA
Sinking current I
sink
V
GDRV
2 V
YY = 00
YY = 01
500
500
600
600
mA
Driving voltage dropout V
drv,do
V
IN
− V
DRV
, Iv
DRV
= 25 mA 0.3 0.6 V
Driving voltage source current I
drv
V
IN
− V
DRV
= 1 V 35 45 mA
Backdrive diode voltage drop V
d,bd
V
DRV
− V
IN
, I
d,bd
= 5 mA 0.7 V
Driving voltage V
DRV
I
VDRV
= 0.1 − 25 mA
YY = 00
YY = 01
6.0
6.0
6.3
6.3
6.6
6.6
V
UVLO
Undervoltage lock−out,
Threshold voltage
V
uvlo
V
IN
falling 2.95 3.05 3.15 V
Undervoltage lock−out,
Hysteresis
V
uvlo,hys
V
IN
rising 50 150 250 mV
THERMAL SHUTDOWN
Thermal shutdown threshold
T
sd
T
J
rising 160 170 180 °C
Thermal shutdown hysteresis T
sd,hys
T
J
falling 10 15 20 °C
Thermal shutdown delay t
sd,dly
From T
J
> T
sd
to stop switching 100 ns
NCV8873
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6
TYPICAL PERFORMANCE CHARACTERISTICS
010203040
V
IN
, INPUT VOLTAGE (V)
Figure 2. Sleep Current vs. Input Voltage
I
q,sleep
, SLEEP CURRENT (
m
A)
T
J
= 25°C
Figure 3. Sleep Current vs. Temperature
−40 10 60 110 160
T
J
, JUNCTION TEMPERATURE (°C)
Figure 4. Quiescent Current vs. Temperature
t
on,min
MINIMUM ON TIME (ns)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. Minimum On Time vs. Temperature
−40 10 60 110 16
0
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Normalized Current Limit vs.
Temperature
−40 10 60 110 160
NORMALIZED CURRENT LIMIT (25
°
C)
I
q,on
, QUIESCENTCURRENT (mA)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 7. Reference Voltage vs. Temperature
V
ref
, REFERENCE VOLTAGE (V)
−40 10 60 110 1
60
−50 0 50 100 2
00
I
q,sleep
, SLEEP CURRENT (mA)
V
IN
= 13.2 V
0
1
2
3
4
5
6
150
T
J
, JUNCTION TEMPERATURE (°C)
0
1
2
3
4
5
7
6
4.3
4.4
4.5
4.6
4.7
4.8
4.9
0.990
0.995
1.000
1.005
1.010
201.2
201.4
201.6
201.8
202.2
202
115
117
119
121
125
123
V
IN
= 13.2 V
4.1
4.2
1.0 MHz
400 kHz

NCV887302D1R2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Switching Controllers AUTOMOTIVE SWITCHER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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