6.4210
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMs with
ZBT
Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
Linear Burst Sequence Table (LBO=VSS)
Interleaved Burst Sequence Table (LBO=V
DDDD
DDDD
DD
)
Functional Timing Diagram
(1)
NOTES:
1. This assumes CEN, CE1, CE2, CE2 are all true.
2. All Address, Control and Data_In are only required to meet set-up and hold time with respect to the rising edge of clock. Data_Out is valid after a clock-to-data delay
from the rising edge of clock.
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state and continues counting.
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state and continues counting.
Sequence 1 Sequence 2 Sequence 3 Sequence 4
A1 A0 A1 A0 A1 A0 A1 A0
First Address 0 0 0 1 1 0 1 1
Second Address 0 1 0 0 1 1 1 0
Third Address 1 0 1 1 0 0 0 1
Fourth Address
(1)
11100100
5304 tbl 10
Sequence 1 Sequence 2 Sequence 3 Sequence 4
A1 A0 A1 A0 A1 A0 A1 A0
First Address 0 0 0 1 1 0 1 1
Second Address 0 1 1 0 1 1 0 0
Third Address 1 0 1 1 0 0 0 1
Fourth Address
(1)
11000110
5304 tbl 11
n+29
A29
C29
D/Q27
ADDRESS
(2)
(A0 - A17)
CONTROL
(2)
(R/W,ADV/LD, BWx)
DATA
(2)
I/O [0 :31], I/O P[1:4]
CYCLE
CLOCK
n+ 30
A30
C30
D/Q28
n+31
A31
C31
D/Q29
n+32
A32
C32
D/Q30
n+33
A33
C33
D/Q31
n+34
A34
C34
D/Q32
n+35
A35
C35
D/Q33
n+36
A36
C36
D/Q34
n+ 37
A37
C37
D/Q35
5304 drw 03
,
6.42
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
ZBT
Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
11
NOTES:
1. H = High; L = Low; X = Don’t Care; Z = High Impedance.
2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
Read Operation
(1)
Device Operation - Showing Mixed Load, Burst,
Deselect and NOOP Cycles
(2)
NOTES:
1. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
2. H = High; L = Low; X = Don’t Care; Z = High Impedance.
CycleAddressR/W ADV/LD
CE
(1)
CEN BWx OE
I/O Comments
nA
0
H L L L X X X Load read
n+1 X X H X L X X X Burst read
n+2 A
1
HL LLXLQ
0
Load read
n+3 X X L H L X L Q
0+1
Deselect or STOP
n+4 X X H XLXLQ
1
NOOP
n+5 A
2
H L L L X X Z Load read
n+6 X X H X L X X Z Burst read
n+7 X X L H L X L Q
2
Deselect or STOP
n+8 A
3
L L LLLLQ
2+1
Load write
n+9 X X H X L L X Z Burst write
n+10 A
4
L L LLLXD
3
Load write
n+11 X X L H L X X D
3+1
Deselect or STOP
n+12 X X H X L X X D
4
NOOP
n+13 A
5
L L L L L X Z Load write
n+14 A
6
H L L L X X Z Load read
n+15 A
7
L L LLLXD
5
Load write
n+16 X X H X L L L Q
6
Burst write
n+17 A
8
HL LLXXD
7
Load read
n+18 X X H X L X X D
7+1
Burst read
n+19 A
9
L L LLLLQ
8
Load write
5304tbl 12
CycleAddressR/W ADV/LD
CE
(2)
CEN BWx OE
I/O Comments
nA
0
H L L L X X X Address and Control meet setup
n+1 X X X XLXXXClock Setup Valid
n+2 X X X XXXLQ
0
Contents of Address A
0
Read Out
5304 tbl 13
6.4212
IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMs with
ZBT
Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
Burst Write Operation
(1)
Burst Read Operation
(1)
Write Operation
(1)
NOTES:
1. H = High; L = Low; X = Don’t Care; Z = High Impedance..
2. CE = L is defined as CE
1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
NOTES:
1. H = High; L = Low; X = Don’t Care; Z = High Impedance.
2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
NOTES:
1. H = High; L = Low; X = Don’t Care; ? = Don’t Know; Z = High Impedance.
2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
Cycle Address R/W ADV/LD
CE
(2 )
CEN BWx OE
I/O Comments
nA
0
H L L L X X X Address and Control meet setup
n+1 X X H X L X X X Clock Setup Valid, Advance Counter
n+2 X X H XLXLQ
0
Address A
0
Read Out, Inc. Count
n+3 X X H XLXLQ
0+1
Address A
0+1
Read Out, Inc. Count
n+4 X X H XLXLQ
0+2
Address A
0+2
Read Out, Inc. Count
n+5 A
1
HL LLXLQ
0+3
Address A
0+3
Read Out, Load A
1
n+6 X X H XLXLQ
0
Address A
0
Read Out, Inc. Count
n+7 X X H XLXLQ
1
Address A
1
Read Out, Inc. Count
n+8 A
2
HL LLXLQ
1+1
Address A
1+1
Read Out, Load A
2
5304 tbl 14
Cycle Address R/W ADV/LD
CE
(2 )
CEN BWx OE
I/O Comments
nA
0
L L L L L X X Address and Control meet setup
n+1 X X X X L X X X Clock Setup Valid
n+2 X X X X L X X D
0
Write to Address A
0
5304 tbl 15
CycleAddressR/W ADV/LD
CE
(2)
CEN BWx OE
I/O Comments
nA
0
L L L L L X X Address and Control meet setup
n+1 X X H X L L X X Clock Setup Valid, Inc. Count
n+2 X X H X L L X D
0
Address A
0
Write, Inc. Count
n+3 X X H X L L X D
0+1
Address A
0+1
Write, Inc. Count
n+4 X X H X L L X D
0+2
Address A
0+2
Write, Inc. Count
n+5 A
1
L L LLLXD
0+3
Address A
0+3
Write, Load A
1
n+6 X X H X L L X D
0
Address A
0
Write, Inc. Count
n+7 X X H X L L X D
1
Address A
1
Write, Inc. Count
n+8 A
2
L L LLLXD
1+1
Address A
1+1
Write, Load A
2
5304 tbl 16

71V65603S150BGGI8

Mfr. #:
Manufacturer:
IDT
Description:
SRAM 9Mb ZBT 256K x 36 w/ 2.5V I/O, Pipelined
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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