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IXTV200N10TS

P1-P3P4-P5
© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 175°C 100 V
V
DGR
T
J
= 25°C to 175°C, R
GS
= 1MΩ 100 V
V
GSM
Transient ± 30 V
I
D25
T
C
= 25°C 200 A
I
LRMS
Lead Current Limit, RMS 75 A
I
DM
T
C
= 25°C, pulse width limited by T
JM
500 A
I
A
T
C
= 25°C40 A
E
AS
T
C
= 25°C 1.5 J
P
D
T
C
= 25°C 550 W
T
J
-55 ... +175 °C
T
JM
175 °C
T
stg
-55 ... +175 °C
T
L
1.6mm (0.062in.) from case for 10s 300 °C
Plastic body for 10 seconds 260 °C
F
C
Mounting force (PLUS220) 11.65 / 2.5..14.6 N/lb.
Weight PLUS220 types 4 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 250μA 100 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250μA 2.5 4.5 V
I
GSS
V
GS
= ± 20V, V
DS
= 0V ±200 nA
I
DSS
V
DS
= V
DSS
5 μA
V
GS
= 0V T
J
= 150°C 250 μA
R
DS(on)
V
GS
= 10V, I
D
= 50A, Notes 1, 2 4.5 5.5 mΩ
TrenchMV
TM
Power
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTV200N10T
IXTV200N10TS
V
DSS
= 100V
I
D25
= 200A
R
DS(on)
≤≤
≤≤
≤
5.5m
ΩΩ
ΩΩ
Ω
DS99714A(10/08)
G = Gate D = Drain
S = Source TAB = Drain
Features
International standard packages
175°C Operating Temperature
Avalanche Rated
Low R
DS(on)
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary - Side Switch
High Current Switching Applications
G
S
D (TAB)
PLUS220SMD (IXFV_S)
PLUS220 (IXFV)
G
D
S
D (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTV200N10T
IXTV200N10TS
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 60A, Note 1 60 96 S
C
iss
9400 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 1087 pF
C
rss
140 pF
t
d(on)
35 ns
t
r
31 ns
t
d(off)
45 ns
t
f
34 ns
Q
g(on)
152 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 50A 47 nC
Q
gd
47 nC
R
thJC
0.27 °C/W
R
thCH
PLUS220 0.21 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
I
S
V
GS
= 0V 200 A
I
SM
Repetitive, Pulse width limited by T
JM
500 A
V
SD
I
F
= 50A, V
GS
= 0V, Note 1 1.0 V
t
rr
76 ns
Q
RM
205 nC
I
RM
5.4 A
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
2. On through-hole packages, R
DS(on)
Kelvin test contact
location must be 5mm or less from the package body.
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 50A
R
G
= 3.3Ω (External)
I
F
= 100A, V
GS
= 0V,-di/dt = 100A/μs
V
R
= 50V
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
PLUS220 (IXTV) Outline
PLUS220SMD (IXTV_S) Outline
© 2008 IXYS CORPORATION, All rights reserved
Fig. 1. Output Characteristics
@ 25ºC
0
20
40
60
80
100
120
140
160
180
200
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
5V
6V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
50
100
150
200
250
300
350
0123456
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
5V
6V
7V
Fig. 3. Output Characteristics
@ 150ºC
0
20
40
60
80
100
120
140
160
180
200
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
V
DS
- Volts
I
D
- Amperes
5V
6V
7V
V
GS
= 10V
9V
8V
Fig. 4. R
DS(on)
Normalized to I
D
= 100A Value
vs. Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 200A
I
D
= 100A
Fig. 5. R
DS(on)
Normalized to I
D
= 100A Value
vs. Drain Current
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
0 40 80 120 160 200 240 280 320
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
15V
- - - -
T
J
= 175ºC
T
J
= 25ºC
Fig. 6. Drain Current vs. Case Temperature
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit
IXTV200N10T
IXTV200N10TS
P1-P3P4-P5

IXTV200N10TS

Mfr. #:
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Manufacturer:
Description:
MOSFET N-CH 100V 200A PLUS220SMD
Lifecycle:
New from this manufacturer.
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