© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_200N10T(6V)9-30-08-D
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
22
23
24
25
26
27
28
29
30
31
32
33
34
24 26 28 30 32 34 36 38 40 42 44 46 48 50
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 3.3
V
GS
= 10V
V
DS
= 50V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
0
20
40
60
80
100
120
140
160
180
200
220
2 4 6 8 10 12 14 16 18 20
R
G
- Ohms
t
r
- Nanoseconds
30
35
40
45
50
55
60
65
70
75
80
85
t
d ( o n )
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
I
D
= 50A
I
D
= 25A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
28
30
32
34
36
38
40
42
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
40
45
50
55
60
65
70
75
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3, V
GS
= 10V
V
DS
= 50V
I
D
= 25A
I
D
= 50A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
30
31
32
33
34
35
36
37
38
24 26 28 30 32 34 36 38 40 42 44 46 48 50
I
D
- Amperes
t
f
- Nanoseconds
40
45
50
55
60
65
70
75
80
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3, V
GS
= 10V
V
DS
= 50V
T
J
= 125ºC
T
J
= 25ºC
T
J
= 125ºC
T
J
= 25ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
22
23
24
25
26
27
28
29
30
31
32
33
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 3.3
V
GS
= 10V
V
DS
= 50V
I
D
= 50A
I
D
= 25A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
0
20
40
60
80
100
120
140
160
180
200
2468101214161820
R
G
- Ohms
t
f
- Nanoseconds
50
75
100
125
150
175
200
225
250
275
300
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
I
D
= 50A
I
D
= 25A
IXTV200N10T
IXTV200N10TS
