PBHV9050Z All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 19 August 2010 3 of 13
NXP Semiconductors
PBHV9050Z
500 V, 250 mA PNP high-voltage low V
CEsat
(BISS) transistor
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
.
P
tot
total power dissipation T
amb
25 °C
[1]
-700mW
[2]
- 1400 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature 55 +150 °C
T
stg
storage temperature 65 +150 °C
(1) FR4 PCB, mounting pad for collector 6 cm
2
(2) FR4 PCB, standard footprint
Fig 1. Power derating curves
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
T
amb
(°C)
75 17512525 7525
006aab155
800
400
1200
1600
P
tot
(mW)
0
(1)
(2)
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 175 K/W
[2]
--90K/W
R
th(j-sp)
thermal resistance from
junction to solder point
--20K/W
PBHV9050Z All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 19 August 2010 4 of 13
NXP Semiconductors
PBHV9050Z
500 V, 250 mA PNP high-voltage low V
CEsat
(BISS) transistor
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for collector 6 cm
2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab156
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
1
10
5
1010
2
10
4
10
2
10
1
t
p
(s)
10
3
10
3
1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
006aab157
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
1
10
5
1010
2
10
4
10
2
10
1
t
p
(s)
10
3
10
3
1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
PBHV9050Z All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 19 August 2010 5 of 13
NXP Semiconductors
PBHV9050Z
500 V, 250 mA PNP high-voltage low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= 360 V; I
E
=0A - - 100 nA
V
CB
= 360 V; I
E
=0A;
T
j
= 150 °C
--10 μA
I
CES
collector-emitter cut-off
current
V
CE
= 360 V; V
BE
=0V - - 100 nA
I
EBO
emitter-base cut-off
current
V
EB
= 5V; I
C
=0A - - 100 nA
h
FE
DC current gain V
CE
= 10 V
I
C
= 10 mA
[1]
100 160 300
I
C
= 50 mA
[1]
80 160 300
I
C
= 100 mA
[1]
70 150 -
V
CEsat
collector-emitter
saturation voltage
I
C
= 20 mA; I
B
= 2mA
[1]
- 115 200 mV
I
C
= 50 mA; I
B
= 10 mA
[1]
- 95 200 mV
I
C
= 100 mA;
I
B
= 20 mA
[1]
- 140 350 mV
V
BEsat
base-emitter saturation
voltage
I
C
= 50 mA; I
B
= 10 mA
[1]
- 0.75 0.9 V
t
d
delay time V
CC
= 20 V;
I
C
= 0.05 A;
I
Bon
= 5mA;
I
Boff
=10mA
-75-ns
t
r
rise time - 1600 - ns
t
on
turn-on time - 1675 - ns
t
s
storage time - 1200 - ns
t
f
fall time - 550 - ns
t
off
turn-off time - 1750 - ns
f
T
transition frequency V
CE
= 10 V;
I
E
= 10 mA; f = 100 MHz
-50-MHz
C
c
collector capacitance V
CB
= 20 V; I
E
=i
e
=0A;
f=1MHz
-6-pF
C
e
emitter capacitance V
EB
= 0.5 V;
I
C
=i
c
=0A; f=1MHz
- 170 - pF

PBHV9050ZF

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT PBHV9050Z/SOT223/SC-73
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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