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PBHV9050ZF

P1-P3P4-P6P7-P9P10-P12P13-P14
PBHV9050Z All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 19 August 2010 6 of 13
NXP Semiconductors
PBHV9050Z
500 V, 250 mA PNP high-voltage low V
CEsat
(BISS) transistor
V
CE
= −10 V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
Fig 4. DC current gain as a function of collector
current; typical values
Fig 5. Collector current as a function of
collector-emitter voltage; typical values
V
CE
= −10 V
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
I
C
/I
B
=5
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 6. Base-emitter voltage as a function of collector
current; typical values
Fig 7. Base-emitter saturation voltage as a function
of collector current; typical values
006aab692
120
60
180
240
h
FE
0
I
C
(mA)
−10
−1
−10
3
−10
2
−1 −10
(3)
(2)
(1)
006aab693
V
CE
(V)
0 −5−4−2 −3−1
−0.2
−0.3
−0.1
−0.4
−0.5
I
C
(A)
0.0
I
B
(mA) = −200
−60
−20
−80
−40
−180
−160
−140
−120
−100
006aab694
−0.50
−0.25
−0.75
−1.00
V
BE
(V)
0.0
I
C
(mA)
−10
−1
−10
3
−10
2
−1 −10
(3)
(2)
(1)
006aab695
−0.6
−0.3
−0.9
−1.2
V
BEsat
(V)
0.0
I
C
(mA)
−10
−1
−10
3
−10
2
−1 −10
(3)
(2)
(1)
PBHV9050Z All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 19 August 2010 7 of 13
NXP Semiconductors
PBHV9050Z
500 V, 250 mA PNP high-voltage low V
CEsat
(BISS) transistor
I
C
/I
B
=5
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
=20
(2) I
C
/I
B
=10
(3) I
C
/I
B
=5
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
I
C
/I
B
=5
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
=20
(2) I
C
/I
B
=10
(3) I
C
/I
B
=5
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
006aab696
I
C
(mA)
−10
−1
−10
3
−10
2
−1 −10
−10
−1
−1
V
CEsat
(V)
−10
−2
(3)
(2)
(1)
006aab697
I
C
(mA)
−10
−1
−10
3
−10
2
−1 −10
−10
−1
−1
V
CEsat
(V)
−10
−2
(3)
(2)
(1)
006aab698
10
1
10
3
10
2
10
4
R
CEsat
(Ω)
10
−1
I
C
(mA)
−10
−1
−10
3
−10
2
−1 −10
(1)
(2)
(3)
006aab699
10
1
10
3
10
2
10
4
R
CEsat
(Ω)
10
−1
I
C
(mA)
−10
−1
−10
3
−10
2
−1 −10
(3)
(2)
(1)
PBHV9050Z All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 19 August 2010 8 of 13
NXP Semiconductors
PBHV9050Z
500 V, 250 mA PNP high-voltage low V
CEsat
(BISS) transistor
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
Fig 12. Test circuit for switching times
R
C
R2
R1
DUT
mgd624
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
I
V
CC
Fig 13. Package outline SOT223 (SC-73)
04-11-10Dimensions in mm
6.7
6.3
3.1
2.9
1.8
1.5
7.3
6.7
3.7
3.3
1.1
0.7
132
4
4.6
2.3
0.8
0.6
0.32
0.22
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
1000 4000
PBHV9050Z SOT223 8 mm pitch, 12 mm tape and reel -115 -135
P1-P3P4-P6P7-P9P10-P12P13-P14

PBHV9050ZF

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Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT PBHV9050Z/SOT223/SC-73
Lifecycle:
New from this manufacturer.
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