Characteristics STPS2L60
2/9 Doc ID 9173 Rev 6
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.43 x I
F(AV)
+ 0.06 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 60 V
I
F(RMS)
Forward rms voltage 10 A
I
F(AV)
Average forward current
SMB flat T
L
= 130 °C δ = 0.5
2ASMA T
L
= 115 °C δ = 0.5
DO-41 T
L
= 110 °C δ = 0.5
I
FSM
Surge non repetitive forward current t
p
=10 ms sinusoidal 75 A
P
ARM
Repetitive peak avalanche power t
p
= 1 µs T
j
= 25 °C 1600 W
T
stg
Storage temperature range -65 to + 150 °C
T
j
Maximum operating junction temperature
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
Table 3. Thermal resistance
Symbol Test conditions Value Unit
R
th(j-l)
Junction-lead
SMB flat 15
°C/WSMA 25
Lead length = 10 mm DO-41 30
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 380 µs, δ < 2%
Reverse leakage
current
T
j
= 25 °C
V
R
= V
RRM
100 µA
T
j
= 100 °C 2 10 mA
V
F
(1)
Forward voltage drop
T
j
= 25 °C
I
F
= 2 A
0.60
V
T
j
= 125 °C 0.51 0.55
T
j
= 25 °C
I
F
= 4 A
0.77
T
j
= 125 °C 0.62 0.67
dPtot
dTj
<
1
Rth(j-a)
