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IRLR7807ZTRLPBF
P1-P3
P4-P6
P7-P9
P10-P12
IRLR/U7807ZPbF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
V
DS
, D
rai
n-t
o-Source V
ol
tage (
V
)
10
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
S
H
O
R
T
E
D
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0
4
8
12
16
Q
G
Tot
al
Gat
e Char
ge (nC
)
0
2
4
6
8
10
12
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 24V
VDS= 15
V
I
D
= 12A
0.0
0.5
1.
0
1.5
2.0
V
SD
, S
ource-
t
oDr
ain V
ol
tage (
V)
0.1
1.0
10.0
100.0
1000.0
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 175°
C
V
GS
= 0V
0.1
1.0
10.0
100.0
1000.0
V
DS
, D
rai
n-
toS
ource V
ol
tage (
V
)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc =
25°C
Tj
= 175°C
Si
ngl
e Pul
se
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
IRLR/U7807ZPbF
www.irf.com
5
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Threshold Voltage vs. Temperature
25
50
75
100
125
150
175
T
C
, C
ase Tem
perat
ure (
°
C)
0
10
20
30
40
50
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
LIM
ITED BY PACKAGE
-75
-50
-25
0
25
50
75
100
125
150
175
T
J
, T
emper
atur
e ( °
C )
1.0
1.5
2.0
2.5
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
1
, R
ectangul
ar
Pul
se Dur
at
ion (
sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D =
0.
50
0.02
0.01
0.05
SINGLE PUL
SE
( THERMAL RESPO
NSE )
Notes
:
1. Du
ty Fa
ctor
D = t1/t2
2. P
eak Tj
= P dm x Z
t
hjc +
Tc
Ri (°C/W)
τ
i (sec)
1.796 0.000267
1.112 0.000607
0.842 0.004249
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci=
i
/
Ri
Ci=
τ
i
/
Ri
IRLR/U7807ZPbF
6
www.irf.com
D.U.T
.
V
D
S
I
D
I
G
3mA
V
GS
.3
µ
F
50K
Ω
.2
µ
F
12V
Current
Regulator
Same
Type
as
D.U.T
.
Current
Sampling
Resistors
+
-
Fig 13.
Gate Charge Test Circuit
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
V
GS
25
50
75
100
125
150
175
St
art
i
ng T
J
, Junct
i
on Tem
perat
ure (
°C
)
0
20
40
60
80
100
120
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP
3.0A
1.4A
BOTTOM
12A
Fig 14a.
Switching Time Test Circuit
Fig 14b.
Switching Time Waveforms
V
GS
V
DS
9
0%
10%
t
d(
on)
t
d(off)
t
r
t
f
V
GS
Puls
e Width <
1µs
Duty Fac
tor < 0.1%
V
DD
V
DS
L
D
D.U.T
+
-
P1-P3
P4-P6
P7-P9
P10-P12
IRLR7807ZTRLPBF
Mfr. #:
Buy IRLR7807ZTRLPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 43A 13.8mOhm 30V 7nC Qg log lvl
Lifecycle:
New from this manufacturer.
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