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BYT79-600,127

P1-P3P4-P6P7-P9P10-P12
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BYT79-600
Rectifier diode ultrafast
15 December 2016 Product data sheet
1. General description
Ultrafast, epitaxial rectifier diode in a SOD59 (TO-220AC) plastic package
2. Features and benefits
• Fast switching
• Low thermal resistance
• Soft recovery characteristic
• Low forward voltage drop
• Low switching loss
• High thermal cycling performance
3. Applications
• Output rectifiers in high frequency switched-mode power supplies
• Discontinuous Current Mode (DCM) Power Factor Correction (PFC)
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
R
reverse voltage Square-wave; δ = 1.0 - - 600 V
I
F(AV)
average forward
current
δ = 0.5 ; T
mb
≤ 108 °C; square-wave
pulse; Fig. 1; Fig. 2; Fig. 3
- - 15 A
I
FRM
repetitive peak forward
current
δ = 0.5 ; t
p
= 25 µs; T
mb
≤ 108 °C;
Square-wave
- - 30 A
t
p
= 10 ms; T
j(init)
= 25 °C; Sinusoidal
waveform; Fig. 4
- - 130 AI
FSM
non-repetitive peak
forward current
t
p
= 8.3 ms; T
j(init)
= 25 °C; Sinusoidal
waveform
- - 143 A
Static characteristics
I
F
= 15 A; T
j
= 150 °C; Fig. 6 - 1 1.2 VV
F
forward voltage
I
F
= 15 A; T
j
= 25 °C; Fig. 6 - 1.17 1.38 V
Dynamic characteristics
t
rr
reverse recovery time I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C; Fig. 7
- 50 60 ns
WeEn Semiconductors
BYT79-600
Rectifier diode ultrafast
BYT79-600 All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 15 December 2016 2 / 11
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode
2 A anode
mb mb mounting base; cathode
mb
1 2
TO-220AC (SOD59)
A
001aaa020
K
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BYT79-600 TO-220AC plastic single-ended package; heatsink mounted; 1 mounting
hole; 2-lead TO-220AC
SOD59
P1-P3P4-P6P7-P9P10-P12

BYT79-600,127

Mfr. #:
Buy BYT79-600,127
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers Diode Ult Fast Recov Rectifier 600V 15A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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