WeEn Semiconductors
BYT79-600
Rectifier diode ultrafast
BYT79-600 All information provided in this document is subject to legal disclaimers.
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WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 15 December 2016 3 / 11
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse
voltage
- 600 V
V
RWM
crest working reverse
voltage
- 600 V
V
R
reverse voltage Square-wave; δ = 1.0 - 600 V
I
F(AV)
average forward current δ = 0.5 ; T
mb
≤ 108 °C; square-wave
pulse; Fig. 1; Fig. 2; Fig. 3
- 15 A
I
FRM
repetitive peak forward
current
δ = 0.5 ; t
p
= 25 µs; T
mb
≤ 108 °C;
Square-wave
- 30 A
t
p
= 10 ms; T
j(init)
= 25 °C; Sinusoidal
waveform; Fig. 4
- 130 AI
FSM
non-repetitive peak
forward current
t
p
= 8.3 ms; T
j(init)
= 25 °C; Sinusoidal
waveform
- 143 A
T
stg
storage temperature -55 150 °C
T
j
junction temperature - 150 °C
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0
10
20
30
0 6 12 18 24
I
F(AV)
(A)
P
tot
(W)
δ = 1
0.5
0.2
0.1
I
F(AV)
= I
F(RMS)
× √δ
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform; maximum
values
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0
4
8
12
16
20
0 5 10 15
I
F(AV)
(A)
P
tot
(W)
a = 1.57
1.9
2.2
2.8
4.0
a = form factor = I
F(RMS)
/ I
T(AV)
Fig. 2. Forward power dissipation as a function
of average forward current; sinusoidal waveform;
maximum values
