IXGH50N90B2 Datasheet IXGH50N90B2, IXGT50N90B2 | P1-P3

V

CES

= 900 V

I

C25

= 75 A

V

CE(sat)

= 2.7 V

t

fi typ

= 200 ns

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

V

GE(th)

I

C

= 250 µA, V

CE

= V

GE

3.0 5.0 V

I

CES

V

CE

= V

CES

T

J

= 25°C50µA

V

GE

= 0 V T

J

= 150°C1mA

I

GES

V

CE

= 0 V, V

GE

= ±20 V ±100 nA

V

CE(sat)

I

C

= I

C110

, V

GE

= 15 V 2.2 2.7 V

T

J

= 125°CV

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 150°C 900 V

V

CGR

T

J

= 25°C to 150°C; R

GE

= 1 MΩ 900 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C (limited by leads) 75 A

I

C110

T

C

= 110°C50A

I

CM

T

C

= 25°C, 1 ms 200 A

SSOA V

GE

= 15 V, T

VJ

= 125°C, R

G

= 10 Ω I

CM

= 100 A

(RBSOA) Clamped inductive load @

≤ 600V

P

C

T

C

= 25°C 400 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

M

d

Mounting torque (TO-247) 1.13/10Nm/lb.in.

Weight TO-247 AD 6 g

TO-268 4 g

DS99377(04/05)

G = Gate, C = Collector,

E = Emitter, TAB = Collector

Features

z

High frequency IGBT

z

High current handling capability

z

MOS Gate turn-on

- drive simplicity

Applications

z

PFC circuits

z

Uninterruptible power supplies (UPS)

z

Switched-mode and resonant-mode

power supplies

z

AC motor speed control

z

DC servo and robot drives

z

DC choppers

Advantages

z

High power density

z

Very fast switching speeds for high

frequency applications

HiPerFAST

TM

IGBT

IXGH 50N90B2

IXGT 50N90B2

TO-268

(IXGT)

C (TAB)

G

C

E

TO-247

(IXGH)

E

G

B2-Class High Speed IGBTs

Advance Technical Information

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH 50N90B2

IXGT 50N90B2

IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505

of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

g

fs

I

C

= I

C110

A; V

CE

= 10 V, 25 40 S

Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

C

ies

2500 pF

C

oes

V

CE

= 25 V, V

GE

= 0 V, f = 1 MHz 180 pF

C

res

75 pF

Q

g

135 nC

Q

ge

I

C

= I

C110

A, V

GE

= 15 V, V

CE

= 0.5 V

CES

23 nC

Q

gc

50 nC

t

d(on)

20 ns

t

ri

28 ns

t

d(off)

350 500 ns

t

fi

200 ns

E

off

4.7 7.5 mJ

t

d(on)

20 ns

t

ri

28 ns

E

on

0.7 mJ

t

d(off)

400 ns

t

fi

420 ns

E

off

8.7 mJ

R

thJC

0.31 K/W

R

thCK

(TO-247) 0.25 K/W

Inductive load, T

J

= 25

°°

°C

I

C

= I

C110

A, V

GE

= 15 V

V

CE

= 720 V, R

G

= R

off

= 5 Ω

Inductive load, T

J

= 125

°°

°C

I

C

= I

C110

A, V

GE

= 15 V

V

CE

= 720 V, R

G

= R

off

= 5 Ω

TO-247 AD Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

e

∅ P

TO-268 Outline

Min. Recommended Footprint

(Dimensions in inches and mm)

IXGH 50N90B2

IXGT 50N90B2

Fig. 2. Extended Output Characteristics

@ 25

º

C

0

50

100

150

200

250

300

03691215

V

C E

- Volts

I

C

- Amperes

V

GE

= 15V

7V

9V

11V

13 V

5V

Fig. 3. Output Characteristics

@ 125

º

C

0

10

20

30

40

50

60

70

80

90

100

00.511.522.533.544.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

7V

5V

9V

Fig. 1. Output Characteristics

@ 25

º

C

0

10

20

30

40

50

60

70

80

90

100

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5

V

C E

- Volts

I

C

- Amperes

V

GE

=15V

13V

11V

9V

5V

7V

Fig. 4. Dependence of V

CE(sat)

on

Temperature

0.7

0.8

0.9

1.0

1.1

1.2

1.3

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

C E (sat)

- Normalized

I

C

= 50A

I

C

= 25A

V

GE

= 15V

I

C

= 100A

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter voltage

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

5 6 7 8 9 10 11 12 13 14 15

V

G E

- Volts

V

C E

- Volts

T

J

= 25

º

C

I

C

= 100A

50A

25A

Fig. 6. Input Admittance

0

25

50

75

100

125

150

175

200

225

250

3456789101112

V

G E

- Volts

I

C

- Amperes

T

J

= -40

º

C

25

º

C

125

º

C

IXGH50N90B2

IXGH50N90B2

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