IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 50N90B2
IXGT 50N90B2
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
40
45
50
55
0 25 50 75 100 125 150 175 200 225
I
C
- Amperes
g
f s
- Siemens
T
J
= -40
º
C
25
º
C
125
º
C
Fig. 8. Dependence of Turn-off
Energy Loss on R
G
0
5
10
15
20
25
30
35
40
0 30 6090120150
R
G
- Ohms
E
o f f
- milliJoules
I
C
= 25A
T
J
= 125
º
C
V
GE
= 15V
V
CE
= 720V
I
C
= 50A
I
C
= 100A
Fig. 9. Dependence of Turn-Off
Energy Loss on I
C
0
2
4
6
8
10
12
14
16
18
20
20 30 40 50 60 70 80 90 100
I
C
- Amperes
E
o f f
- MilliJoules
R
G
= 5Ω
V
GE
= 15V
V
CE
= 720V
T
J
= 125
º
C
T
J
= 25
º
C
Fig. 10. Dependence of Turn-off
Energy Loss on Temperature
0
2
4
6
8
10
12
14
16
18
20
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
o f f
- milliJoules
I
C
= 100A
R
G
= 5Ω
V
GE
= 15V
V
CE
= 720V
I
C
= 50A
I
C
= 25A
Fig. 11. Dependence of Turn-off
Switching Time on R
G
200
300
400
500
600
700
800
900
1000
1100
1200
1300
5 101520253035404550
R
G
- Ohms
Switching Time - nanoseconds
t
d(off)
t
fi
- - - - - -
T
J
= 125ºC
V
GE
= 15V
V
CE
= 720V
I
C
= 100A
50A
25A
I
C
= 25A
50A
100A
Fig. 12. Dependence of Turn-off
Switching Time
on I
C
150
200
250
300
350
400
450
500
550
600
20 30 40 50 60 70 80 90 100
I
C
- Amperes
Switching Time - nanoseconds
t
d(off)
t
fi
- - - - -
R
G
= 5Ω, V
GE
= 15V
V
CE
= 720V
T
J
= 125
º
C
T
J
= 25
º
C
