WeEn Semiconductors
BT158W-1200T
SCR
BT158W-1200T All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 20 April 2017 3 / 13
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state
voltage
- 1200 V
V
RRM
repetitive peak reverse
voltage
- 1200 V
I
T(AV)
average on-state current half sine wave; T
mb
≤ 117 °C - 80 A
I
T(RMS)
RMS on-state current half sine wave; T
mb
≤ 117 °C; Fig. 1;
Fig. 2; Fig. 3
- 126 A
half sine wave; T
j(init)
= 25 °C; t
p
= 10 ms;
Fig. 4; Fig. 5
- 1100 AI
TSM
non-repetitive peak on-
state current
half sine wave; T
j(init)
= 25 °C; t
p
= 8.3 ms - 1210 A
I
2
t I
2
t for fusing t
p
= 10 ms; sine-wave pulse;
T
j(init)
= 25 °C; no voltage reapplied
- 6115 A²s
dI
T
/dt rate of rise of on-state
current
I
G
= 200 mA - 150 A/µs
I
GM
peak gate current - 8 A
V
RGM
peak reverse gate
voltage
- 5 V
P
GM
peak gate power - 20 W
P
G(AV)
average gate power over any 20 ms period - 1 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 150 °C
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
f = 50 Hz; T
mb
= 117 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
