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BT158W-1200TQ
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
WeEn Semiconductors
BT158W-1200T
SCR
BT158W-1200T
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
20 April 2017
7 / 13
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 7
;
Fig. 8
-
-
70
mA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T
j
= 25 °C;
Fig. 9
-
-
300
mA
I
H
holding current
V
D
= 12 V; T
j
= 25 °C;
Fig. 10
-
-
200
mA
I
T
= 80 A; T
j
= 25 °C;
Fig. 11
-
-
1.35
V
V
T
on-state voltage
I
T
= 160 A; T
j
= 25 °C;
Fig. 11
-
-
1.65
V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 12
-
0.7
1
V
V
GT
gate trigger voltage
V
D
= 800 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 12
0.25
0.4
-
V
I
D
off-state current
V
D
= 1200 V; T
j
= 125 °C
-
-
3
mA
I
R
reverse current
V
R
= 1200 V; T
j
= 125 °C
-
-
3
mA
Dynamic characteristics
V
DM
= 800 V; T
j
= 125 °C; R
GK
= 100 Ω;
(V
DM
= 67% of V
DRM
); exponential
waveform
1500
-
-
V/µs
dV
D
/dt
rate of rise of off-state
voltage
V
DM
= 800 V; T
j
= 150 °C; R
GK
= 100 Ω;
(V
DM
= 67% of V
DRM
); exponential
waveform
1000
-
-
V/µs
t
gt
gate-controlled turn-on
time
I
TM
= 40 A; V
D
= 800 V; I
G
= 0.1 A; dI
G
/
dt = 5 A/µs; T
j
= 25 °C
-
2
-
µs
t
q
commutated turn-off
time
V
DM
= 804 V; T
j
= 125 °C; I
TM
= 20 A;
V
R
= 25 V; (dI
T
/dt)
M
= 30 A/µs; dV
D
/
dt = 50 V/µs; R
GK(ext)
= 100 kΩ; (V
DM
=
67% of V
DRM
)
-
150
-
µs
WeEn Semiconductors
BT158W-1200T
SCR
BT158W-1200T
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
20 April 2017
8 / 13
-50
0
50
100
150
0
1
2
3
T
j
(°C)
aaf122-007
I
GT
I
GT(25°C)
Fig. 7. Normalized gate trigger current as a function of
junction temperature
1
10
V
G
(V)
0.1
I
G
(A)
0.001
1000
100
10
0.01
1
0.1
aaf122-008
(1)
d
c
b
a
(4)
(3)
(2)
a
: T
j
= 150°C
b
: T
j
= 125°C
c
: T
j
= 25°C
d
: T
j
= -40°C
(1)
: P
GM
= 10W, t
p
= 5ms
(2)
: P
GM
= 20W, t
p
= 2.5ms
(3)
: P
GM
= 50W, t
p
= 1ms
(4)
: P
GM
= 100W, t
p
= 500us
Fig. 8. Gate voltage as a function of gate current
-50
0
50
100
150
0
1
2
3
T
j
(°C)
aaf122-009
I
L
I
L(25°C)
Fig. 9. Normalized latching current as a function of
junction temperature
-50
0
50
100
150
0
1
2
3
T
j
(°C)
aaf122-010
I
H
I
H(25°C)
Fig. 10. Normalized holding current as a function of
junction temperature
WeEn Semiconductors
BT158W-1200T
SCR
BT158W-1200T
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
20 April 2017
9 / 13
0
1
2
0
40
80
120
160
V
T
(V)
I
T
(A)
aaf122-011
(1)
(2)
(3)
V
o
= 0.984 V; R
s
= 0.0033 Ω
(1) T
j
= 150 °C; typical values
(2) T
j
= 150 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 11. On-state current as a function of on-state
voltage
-50
0
50
100
150
0.4
0.8
1.2
1.6
T
j
(°C)
aaf122-012
V
GT
V
GT(25°C)
Fig. 12. Normalized gate trigger voltage as a function of
junction temperature
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
BT158W-1200TQ
Mfr. #:
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Manufacturer:
WeEn Semiconductors
Description:
SCRs BT158W-1200TQ/TO-247
Lifecycle:
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