SPD100N03S2L-04

2003-05-09
Page 7
SPD100N03S2L-04
13 Typ. avalanche energy
E
AS
= f (T
j
)
par.: I
D
= 80 A, V
DD
= 25 V, R
GS
= 25
25 45 65 85 105 125 145 °C 185
T
j
0
50
100
150
200
250
mJ
350
E
AS
14 Typ. gate charge
V
GS
= f (Q
Gate
)
parameter: I
D
= 100 A pulsed
0 20 40 60 80
nC
110
Q
Gate
0
2
4
6
8
10
12
V
16
SPD100N03S2L-04
V
GS
0,8 V
DS max
DS max
V0,2
15 Drain-source breakdown voltage
V
(BR)DSS
= f (T
j
)
parameter: I
D
=10 mA
-60 -20 20 60 100 140
°C
200
T
j
27
28
29
30
31
32
33
34
V
36
SPD100N03S2L-04
V
(BR)DSS
2003-05-09
Page 8
SPD100N03S2L-04
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Further information
Please notice that the part number is BSPD100N03S2L-04, for simplicity the device is referred to by the term
SPD100N03S2L-04 throughout this documentation.

SPD100N03S2L-04

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 30V 100A DPAK
Lifecycle:
New from this manufacturer.
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