BGA7024 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 11 June 2014 3 of 23
NXP Semiconductors
BGA7024
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
5. Limiting values
6. Thermal characteristics
[1] Case is ground solder pad.
[2] Thermal resistance measured using infrared measurement technique, device mounted on application board
and placed in still air.
7. Static characteristics
8. Dynamic characteristics
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CC(RF)
RF supply voltage - 5.7 V
P
i(RF)
RF input power - 25 dBm
T
case
case temperature 40 +85 C
T
j
junction temperature - 150 C
V
ESD
electrostatic discharge voltage Human Body Model (HBM);
according to JEDEC standard 22-A114E
-2000V
Charged Device Model (CDM);
according to JEDEC standard 22-C101B
-500V
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-c)
thermal resistance from junction to case
[1][2]
25 K/W
Table 6. Characteristics
Input and output impedances matched to 50
. Typical values at V
CC
=5V; T
case
=25
C; unless
otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage - 5.0 - V
I
CC
supply current 95 110 125 mA
Table 7. Dynamic characteristics
Input and output impedances matched to 50
. Typical values at V
CC
=5V; T
case
=25
C; see
Section 12 “
Application information”; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
f frequency
[1]
400 - 2700 MHz
G
p
power gain f = 940 MHz - 22 - dB
f = 1960 MHz - 16 - dB
f = 2140 MHz 13.5 15 16.5 dB
f = 2445 MHz - 14 - dB
