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BGA7024,135

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23
BGA7024 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 11 June 2014 4 of 23
NXP Semiconductors
BGA7024
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
[1] Operation outside this range is possible but not guaranteed.
[2] P
L
= 11 dBm per tone; spacing = 1 MHz.
[3] Defined at P
i(RF)
= 40 dBm; small signal conditions.
9. Scattering parameters
P
L(1dB)
output power at 1 dB gain compression f = 940 MHz - 24 - dBm
f = 1960 MHz - 25.5 - dBm
f = 2140 MHz 24.0 25.5 - dBm
f = 2445 MHz - 24.5 - dBm
IP3
O
output third-order intercept point f = 940 MHz
[2]
- 37.5 - dBm
f = 1960 MHz
[2]
- 38.0 - dBm
f = 2140 MHz
[2]
35.0 38.0 - dBm
f = 2445 MHz
[2]
- 37.5 - dBm
NF noise figure f = 940 MHz
[3]
-2.9- dB
f = 1960 MHz
[3]
-3.7- dB
f = 2140 MHz
[3]
-3.7- dB
f = 2445 MHz
[3]
-4.0- dB
RL
in
input return loss f = 940 MHz - 9- dB
f = 1960 MHz - 10 - dB
f = 2140 MHz - 10 - dB
f = 2445 MHz - 14 - dB
RL
out
output return loss f = 940 MHz - 29 - dB
f = 1960 MHz - 22 - dB
f = 2140 MHz - 29 - dB
f = 2445 MHz - 11 - dB
Table 7. Dynamic characteristics
…continued
Input and output impedances matched to 50
. Typical values at V
CC
=5V; T
case
=25
C; see
Section 12 “Application information”; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Table 8. Scattering parameters at 5 V, MMIC only
f (MHz) S
11
S
21
S
12
S
22
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
400 0.83 178.9 14.03 112.7 0.01 35.5 0.53 166.3
500 0.85 178.7 11.69 104.4 0.01 38.77 0.56 168.9
600 0.85 176.4 9.93 98.19 0.02 41.13 0.57 172.2
700 0.86 173.8 8.67 93.04 0.02 43.1 0.58 174.8
800 0.86 171.1 7.68 88.54 0.02 44.34 0.58 177.4
900 0.86 168.3 6.9 84.36 0.02 44.96 0.59 179.7
1000 0.86 165.4 6.29 80.24 0.02 45.07 0.60 176.7
1100 0.87 162.7 5.72 76.42 0.02 45 0.60 173.3
1200 0.88 159.9 5.23 72.83 0.02 44.54 0.60 170.9
1300 0.88 157.3 4.80 69.34 0.03 44.17 0.61 168.4
BGA7024 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 11 June 2014 5 of 23
NXP Semiconductors
BGA7024
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
10. Reliability information
11. Moisture sensitivity
1400 0.89 154.8 4.43 66.17 0.03 43.58 0.61 166.4
1500 0.89 153 4.09 63.33 0.03 43.02 0.62 164.7
1600 0.89 151.3 3.80 60.8 0.03 42.67 0.63 163.1
1700 0.90 149.9 3.54 58.3 0.03 42.36 0.64 162.1
1800 0.90 148.7 3.30 56.13 0.03 41.89 0.65 161.2
1900 0.90 147.9 3.11 54.13 0.03 41.65 0.66 160.8
2000 0.91 147.5 2.93 52.63 0.03 41.7 0.66 160.5
2100 0.90 147 2.78 50.91 0.04 41.61 0.66 160.5
2200 0.90 146.9 2.65 49.5 0.04 41.59 0.67 160.9
2300 0.90 146.6 2.54 48.13 0.04 41.44 0.66 161.6
2400 0.90 146.5 2.46 46.88 0.04 41.61 0.66 161.7
2500 0.89 146.3 2.39 45.39 0.04 41.45 0.66 162.6
2600 0.88 146 2.34 43.93 0.05 41.13 0.65 162.8
2700 0.87 145.4 2.30 42.24 0.05 40.56 0.64 163.2
Table 8. Scattering parameters at 5 V, MMIC only
…continued
f (MHz) S
11
S
21
S
12
S
22
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Table 9. Reliability
Life test Conditions Intrinsic failure rate
HTOL according to JESD85; confidence level 60 %; T
j
=55C;
activation energy = 0.7 eV; acceleration factor according to
Arrhenius equation
4
Table 10. Moisture sensitivity level
Test methodology Class
JESD-22-A113 1
BGA7024 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 11 June 2014 6 of 23
NXP Semiconductors
BGA7024
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
12. Application information
12.1 920 MHz to 960 MHz
See Table 11 for a list of components.
PCB specification: Rogers RO4003C; height = 0.508 mm;
r
= 3.38; copper thickness = 35 m.
Fig 2. 5 V application schematic; 920 MHz to 960 MHz
L3
C9
C3
C4
C5
C7
C8
C6
R1
V
CC
L1
L2
C2
C1
MSL1 MSL2 MSL3 MSL4 MSL6MSL5
RF_IN
V
CC(RF)
BGA7024
50 Ω 50 Ω
014aab021
J1
J3
J2
(1) T
case
= 40 C.
(2) T
case
= 25 C.
(3) T
case
= 85 C.
(1) T
case
= 40 C.
(2) T
case
= 25 C.
(3) T
case
= 85 C.
Fig 3. Output power at 1 dB gain compression as a
function of frequency
Fig 4. Power gain as a function of frequency
f (GHz)
0.92 0.960.950.93 0.94
24
26
22
28
30
P
L(1dB)
(dBm)
20
(1)
(3)
(2)
014aab022
f (GHz)
0.92 0.960.950.93 0.94
22
24
20
26
28
G
p
(dB)
18
(1)
(3)
(2)
014aab023
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BGA7024,135

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NXP Semiconductors
Description:
RF Amplifier Driver Amplifier One-stage
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