NCV7340
http://onsemi.com
5
TxD Dominant Time−out Function
A TxD dominant time−out timer circuit prevents the bus
lines being driven to a permanent dominant state (blocking
all network communication) if pin TxD is forced
permanently low by a hardware and/or software application
failure. The timer is triggered by a negative edge on pin TxD.
If the duration of the low−level on pin TxD exceeds the
internal timer value t
dom(TxD)
, the transmitter is disabled,
driving the bus into a recessive state. The timer is reset by a
positive edge on pin TxD.
This TxD dominant time−out time (t
dom(TxD)
) defines the
minimum possible bit rate to 40 kbps.
Fail Safe Features
A current−limiting circuit protects the transmitter output
stage from damage caused by accidental short circuit to
either positive or negative supply voltage, although power
dissipation increases during this fault condition.
The pins CANH and CANL are protected from
automotive electrical transients (according to ISO 7637; see
Figure 5). Pins TxD and STB are pulled high internally
should the input become disconnected. Pins TxD, STB and
RxD will be floating, preventing reverse supply should the
V
CC
supply be removed.
ELECTRICAL CHARACTERISTICS
Definitions
All voltages are referenced to GND (Pin 2). Positive currents flow into the IC. Sinking current means the current is flowing
into the pin; sourcing current means the current is flowing out of the pin.
Table 4. ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Conditions Min Max Unit
V
CC
Supply voltage −0.3 +6 V
V
CANH
DC voltage at pin CANH 0 < V
CC
< 5.25 V; no time limit −50 +50 V
V
CANL
DC voltage at pin CANL 0 < V
CC
< 5.25 V; no time limit −50 +50 V
V
SPLIT
DC voltage at pin V
SPLIT
0 < V
CC
< 5.25 V; no time limit −40 +40 V
V
TxD
DC voltage at pin TxD −0.3 6 V
V
RxD
DC voltage at pin RxD −0.3 6 V
V
STB
DC voltage at pin STB −0.3 6 V
V
esd
Electrostatic discharge voltage at all pins Note 1
Note 2
−6
−500
6
500
kV
V
Electrostatic discharge voltage at CANH and CANL pins Note 3 −12 12 kV
V
schaff
Transient voltage, see Figure 5 Note 5 −150 100 V
Latchup Static latchup at all pins Note 4 120 mA
T
stg
Storage temperature −55 +150 °C
T
A
Ambient temperature −40 +125 °C
T
J
Maximum junction temperature −40 +170 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Standardized human body model electrostatic discharge (ESD) pulses in accordance to EIA−JESD22. Equivalent to discharging a 100 pF
capacitor through a 1.5 kW resistor.
2. Standardized charged device model ESD pulses when tested according to ESD−STM5.3.1−1999.
3. System human body model electrostatic discharge (ESD) pulses. Equivalent to discharging a 150 pF capacitor through a 330 W resistor.
4. Static latchup immunity: Static latchup protection level when tested according to EIA/JESD78.
5. Pulses 1, 2a, 3a and 3b according to ISO 7637 part 3. Verification by external test house.
Table 5. THERMAL CHARACTERISTICS
Symbol Parameter Conditions Value Unit
R
q
JA_1
Thermal Resistance Junction−to−Air, 1S0P PCB (Note 6) Free air 125 K/W
R
q
JA_2
Thermal Resistance Junction−to−Air, 2S2P PCB (Note 7) Free air 75 K/W
6. Test board according to EIA/JEDEC Standard JESD51−3, signal layer with 10% trace coverage.
7. Test board according to EIA/JEDEC Standard JESD51−7, signal layers with 10% trace coverage.