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TN2010H-6T

P1-P3P4-P6P7-P9
August 2017
DocID030739 Rev 1
1/9
This is information on a product in full production.
www.st.com
TN2010H-6T
High temperature 20 A SCRs
Datasheet - production data
Features
High junction temperature: T
j
= 150 °C
High noise immunity dV/dt = 400 V/µs up to
150 °C
Gate triggering current I
GT
= 10 mA
Peak off-state voltage V
DRM
/V
RRM
= 600 V
High turn on current rise dI/dt = 100 A/µs
ECOPACK
®
2 compliant component
Applications
Motorbike voltage regulator circuits
Inrush current limiting circuits
Motor control circuits and starters
Light dimmers
Solid state relays
Description
Packaged in a non-isolated TO-220AB, this
device offers high thermal performance during
operation of up to 20 A
RMS
, thanks to a junction
temperature of up to 150 °C.
The combination of noise immunity and low gate
triggering current allows to design strong and
compact control circuit.
Table 1: Device summary
Order code
V
DRM
/V
RRM
I
GT
TN2010H-6T
TO-220AB
600 V
10 mA
TO-220AB
A
K
G
K
A
G
A
Characteristics
TN2010H-6T
2/9
DocID030739 Rev 1
1 Characteristics
Table 2: Absolute maximum ratings (limiting values), T
j
= 25 °C unless otherwise specified
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current
(180 ° conduction angle)
T
c
= 132 °C
20
A
I
T(AV)
Average on-state current
(180 ° conduction angle)
T
c
= 132 °C
12.7
A
T
c
= 137 °C
10
T
c
= 140 °C
8
I
TSM
Non repetitive surge peak on-state current
( T
j
initial = 25 °C)
t
p
= 8.3 ms
197
A
t
p
= 10 ms
180
I
2
t
I
2
t value for fusing
t
p
= 10 ms
162
A
2
s
dl/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr ≤ 100 ns
f = 60 Hz
100
A/µs
V
DSM
/V
RSM
Non repetitive surge peak off-state voltage
t
p
= 10 ms
700
V
I
GM
Peak gate current
t
p
= 20 µs
T
j
= 150 °C
4
A
P
G(AV)
Average gate power dissipation
T
j
= 150 °C
1
W
V
RGM
Maximum peak reverse gate voltage
5
V
T
stg
Storage junction temperature range
-40 to +150
°C
T
j
Operating junction temperature range
-40 to +150
°C
T
L
Maximum lead temperature for soldering during 10 s
260
°C
Table 3: Electrical characteristics (T
j
= 25 °C unless otherwise specified)
Symbol
Test conditions
Value
Unit
I
GT
V
D
= 12 V, R
L
= 33 Ω
Typ.
5
mA
Max.
10
V
GT
Max.
1.3
V
V
GD
V
D
= V
DRM
, R
L
= 3.3 kΩ
T
j
= 150 °C
Min.
0.1
V
I
H
I
T
= 500 mA, gate open
Max.
40
mA
I
L
I
G
= 1.2 x I
GT
Max.
60
mA
dV/dt
V
D
= 402 V, gate open
T
j
= 150 °C
Min.
400
V/µs
t
gt
I
TM
= 40 A, V
D
= 402 V, I
G
= 20 mA, (dI
G
/dt) max = 0.2 A/µs
Typ.
1.9
µs
t
q
I
TM
= 40 A, V
D
= 402 V, (d
I
/dt)off = 30 A/µs,
V
R
= 25 V, dV
D
/dt = 40 V/µs
T
j
= 150 °C
Typ.
70
µs
TN2010H-6T
Characteristics
DocID030739 Rev 1
3/9
Table 4: Static characteristics
Symbol
Test conditions
Value
Unit
V
TM
I
TM
= 40 A, t
p
= 380 µs
T
j
= 25 °C
Max.
1.6
V
V
TO
Threshold voltage
T
j
= 150 °C
Max.
0.82
R
D
Dynamic resistance
T
j
= 150 °C
Max.
17.5
mΩ
I
DRM
, I
RRM
V
D
= V
DRM,
V
R
= V
RRM
T
j
= 25 °C
Max.
5
µA
T
j
= 125 °C
2
mA
T
j
= 150 °C
3.9
Table 5: Thermal parameters
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case (DC)
Max.
1.0
°C/W
R
th(j-a)
Junction to ambient (DC)
Typ.
60
P1-P3P4-P6P7-P9

TN2010H-6T

Mfr. #:
Buy TN2010H-6T
Manufacturer:
STMicroelectronics
Description:
SCRs High Temperature 20A SCRs
Lifecycle:
New from this manufacturer.
Delivery:
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