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TN2010H-6T
P1-P3
P4-P6
P7-P9
Characteristics
TN2010H-
6T
4/9
DocID030739 Re
v 1
1.1
Characteristics
(curv
es)
Figure 1: Maximum power dissipation versus
average on-state current
Figure 2: Average and DC on-state current versus
case temperature
Figure 3: Average and D.C. on state current versus
ambient temperature
Figure 4: Relative variation of thermal impedance
versus pulse duration
Figure 5: Relative variation of gate trigger
ing
current and gate voltage versus junction
temperature (typical values)
Figure 6: Relative variation of holding and latching
current versus junction temperature
(typical values)
0
2
4
6
8
10
12
14
16
18
20
0
5
10
15
20
α
= 30 °
α
= 60 °
α
= 90 °
α
= 120 °
DC
P(W)
I
T
(A
V)
(A)
α
3
6
0
°
α
= 180 °
0
2
4
6
8
10
12
14
16
18
20
22
24
0
25
50
75
100
125
150
α
= 30 °
α
= 60 °
α
= 90 °
α
= 120 °
α
= 180 °
DC
I
T
(A
V)
(A)
T
c
(°C)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
25
50
75
100
125
150
I
T(A
V)
(A)
DC
T
a
(°C)
α
= 180 °
DC
T
a
(°C)
α
= 180 °
1
.0
E
-
0
2
1
.0
E
-
0
1
1
.0
E
+
0
0
1
.0
E
-0
3
1
.0E
-0
2
1
.0E
-0
1
1
.0
E+
00
1
.0E
+0
1
1.0
E+
02
1
.0E
+0
3
K = [Z
th
/ R
th
]
Z
th(j-a)
Z
th(j-c)
t
P
(s)
0.0
0.5
1.0
1.5
2.0
2.5
-50
-25
0
25
50
75
10
0
12
5
15
0
V
GT
T
j
(°C)
I
GT
, V
GT
[ T
j
] / I
GT
, V
GT
[ T
j
= 25 °C]
I
GT
0.0
0.5
1.0
1.5
2.0
2.5
-50
-25
0
25
50
75
100
125
150
I
H
T
j
(°C)
I
H
, I
L
[ T
j
] / I
H
, I
L
[ T
j
= 25 °C]
I
L
TN2010H-
6T
Characteristics
DocID030739 Re
v 1
5/9
Figure 7: Relative variation of static dV/dt
immunity versus junction temperature
(typical values)
Figure 8: Surge peak on-state current versus
number of cycles
Figure 9: Non repetitive surge peak on-state
current for a sinusoidal pulse with width t
p
< 10 ms
Figure
10
: On-state characteristics
(maximum values)
Figure
11
: Relative variation of le
akage current versus junction temperature
0
2
4
6
8
10
12
14
16
25
50
75
100
125
150
T
j
(°
C)
dV/d
t [T
j
] / dV
/dt [T
j
= 1
50
°C]
V
D
= V
R
= 402 V
Above test equipment capability
0
50
100
150
200
1
10
100
1000
Non repetitive T
j
= 25 °C
Number of cycles
I
TSM
(A)
Repetitive T
c
= 132 °C
t
=10
ms
p
O
ne
cyc
le
10
100
1000
1000
0
0.01
0.10
1.00
10.00
T
j
initial = 25 °C
I
TSM
I
TSM
(A)
dl/dt limitation: 100
A/µs
t
p
(ms)
1
10
10
0
100
0
0.0
2.0
3.0
4.0
1.0
T
j
= 150 °C
I
TM
(A)
V
TM
(V)
T
j
= 25 °C
T
j
max:
V
t0
= 0.82 V
Rd = 17.5 m
Ω
1.E
-04
1.E
-03
1.E
-02
1.E
-01
1.E
+00
25
50
75
10
0
12
5
15
0
T
j
(°C)
V
DRM
=
V
RRM
=
600 V
I
DRM
, I
RRM
[ T
j
] / I
DRM
, I
RRM
[ T
j
= 150 °C ]
Package
inform
ation
TN2010H-
6T
6/9
DocID030739 Re
v 1
2
Package informatio
n
In order to meet en
vironmental requirem
ents, ST of
fers these devices in diff
erent grades of
ECOPACK
®
packages, de
pending on their leve
l of environm
ental compliance. ECO
PACK
®
specifications, grade d
efinitions and product st
atus are available at:
w
ww.st.com
.
ECOPACK
®
is an ST tradem
ark.
Epoxy meets UL94,
V0
Lead
-free, hal
ogen-fr
ee package
Recomm
ended torque value (T
O-
220AB): 0.4 to 0.6 N.m
2.1
TO
-220AB package infor
mation
Figure
12
: TO-220AB (NIns.) package outline
P1-P3
P4-P6
P7-P9
TN2010H-6T
Mfr. #:
Buy TN2010H-6T
Manufacturer:
STMicroelectronics
Description:
SCRs High Temperature 20A SCRs
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
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Union
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