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BYV10X-600PQ

P1-P3P4-P6P7-P9P10-P10
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
T
O
-
2
2
0
F
BYV10X-600P
Ultrafast power diode
3 January 2014 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package.
2. Features and benefits
•
Fast switching
•
Isolated plastic package
•
Low leakage current
•
Low forward voltage drop
•
Low thermal resistance
•
Soft recovery characteristic
3. Applications
•
High frequency switched-mode power supplies
•
Discontinuous Current Mode (DCM) Power Factor Correction (PFC)
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
RRM
repetitive peak reverse
voltage
- - 600 V
I
F(AV)
average forward
current
δ = 0.5 ; T
h
≤ 71 °C; square-wave
pulse; Fig. 1; Fig. 2; Fig. 3
- - 10 A
Static characteristics
V
F
forward voltage I
F
= 10 A; T
j
= 150 °C; Fig. 6 - - 1.6 V
Dynamic characteristics
t
rr
reverse recovery time I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C; Fig. 7
- 20 - ns
NXP Semiconductors
BYV10X-600P
Ultrafast power diode
BYV10X-600P All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 3 January 2014 2 / 9
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode
2 A anode
mb n.c. mounting base; isolated
21
mb
TO-220F (SOD113)
A
001aaa020
K
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BYV10X-600P TO-220F plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 2-lead TO-220 "full pack"
SOD113
7. Marking
Table 4. Marking codes
Type number Marking code
BYV10X-600P BYV10X-600P
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse voltage - 600 V
V
RWM
crest working reverse voltage - 600 V
V
R
reverse voltage DC - 600 V
I
F(AV)
average forward current δ = 0.5 ; T
h
≤ 71 °C; square-wave
pulse; Fig. 1; Fig. 2; Fig. 3
- 10 A
I
FRM
repetitive peak forward current δ = 0.5 ; t
p
= 25 µs; T
h
≤ 71 °C; square-
wave pulse
- 20 A
P1-P3P4-P6P7-P9P10-P10

BYV10X-600PQ

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Manufacturer:
WeEn Semiconductors
Description:
Rectifiers Ultrafast Pwr Diode
Lifecycle:
New from this manufacturer.
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