NXP Semiconductors
BYV10X-600P
Ultrafast power diode
BYV10X-600P All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 3 January 2014 4 / 9
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
without heatsink compound - - 7.2 K/WR
th(j-h)
thermal resistance
from junction to
heatsink
with heatsink compound ; Fig. 5 - - 5.5 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air - 55 - K/W
aaa-008984
t
p
(s)
10
-6
1 1010
-1
10
-2
10
-5
10
-3
10
-4
10
-2
10
-3
1
10
-1
10
Z
th(j-h)
(K/W)
10
-4
P
t
t
p
T
t
p
δ =
T
δ = 0.5
δ = 0.3
δ = 0.1
δ = 0.05
δ = 0.02
δ = 0.01
single pulse
Fig. 5. Transient thermal impedance from junction to heatsink as a function of pulse duration
10. Isolation characteristics
Table 7. Isolation characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
isol(RMS)
RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all
pins to external heatsink; sinusoidal
waveform; clean and dust free
- - 2500 V
C
isol
isolation capacitance f = 1 MHz ; from cathode to external
heatsink
- 10 - pF
11. Characteristics
Table 8. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
F
forward voltage I
F
= 10 A; T
j
= 25 °C; Fig. 6 - 1.5 2 V