IXYX140N90C3 Datasheet IXYX140N90C3, IXYK140N90C3 | P1-P3

IXYK140N90C3

IXYX140N90C3

V

CES

= 900V

I

C110

= 140A

V

CE(sat)

≤ ≤

≤

2.7V

t

fi(typ)

= 105ns

DS100450B(02/13)

High-Speed IGBTs

for 20-50 kHz Switching

Features

z

Optimized for Low Switching Losses

z

Square RBSOA

z

International Standard Packages

z

Positive Thermal Coefficient of

Vce(sat)

z

Avalanche Rated

z

High Current Handling Capability

Advantages

z

High Power Density

z

Low Gate Drive Requirement

Applications

z

High Frequency Power Inverters

z

UPS

z

Motor Drives

z

SMPS

z

PFC Circuits

z

Battery Chargers

z

Welding Machines

z

Lamp Ballasts

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250μA, V

GE

= 0V 950 V

V

GE(th)

I

C

= 250μA, V

CE

= V

GE

3.5 5.5 V

I

CES

V

CE

= V

CES

,

V

GE

= 0V 25 μA

T

J

= 150°C 1.25 mA

I

GES

V

CE

= 0V, V

GE

= ±20V ±100 nA

V

CE(sat)

I

C

= I

C110

, V

GE

= 15V, Note 1 2.15 2.70 V

T

J

= 150°C 2.85 V

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 175°C 900 V

V

CGR

T

J

= 25°C to 175°C, R

GE

= 1MΩ 900 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C (Chip Capability) 310 A

I

LRMS

Terminal Current Limit 160 A

I

C110

T

C

= 110°C 140 A

I

CM

T

C

= 25°C, 1ms 840 A

I

A

T

C

= 25°C 70 A

E

AS

T

C

= 25°C 1 J

SSOA V

GE

= 15V, T

VJ

= 150°C, R

G

= 1Ω I

CM

= 280 A

(RBSOA) Clamped Inductive Load @V

CE

≤ V

CES

P

C

T

C

= 25°C 1630 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

M

d

Mounting Torque (TO-264) 1.13/10 Nm/lb.in.

F

C

Mounting Force (PLUS247) 20..120 /4.5..27 N/lb.

Weight TO-264 10 g

PLUS247 6 g

XPT

TM

900V IGBTs

GenX3

TM

G = Gate E = Emitter

C = Collector Tab = Collector

TO-264 (IXYK)

E

G

C

PLUS247 (IXYX)

G

Tab

E

C

G

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYK140N90C3

IXYX140N90C3

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Notes:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher V

CE

(clamp), T

J

or R

G

.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 60A, V

CE

= 10V, Note 1 30 52 S

C

ie

s

9830 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 570 pF

C

res

185 pF

Q

g(on)

330 nC

Q

ge

I

C

= I

C110

, V

GE

= 15V, V

CE

= 0.5 • V

CES

82 nC

Q

gc

128 nC

t

d(on)

40 ns

t

ri

86 ns

E

on

4.3 mJ

t

d(off)

145 ns

t

fi

105 ns

E

of

f

4.0 6.5 mJ

t

d(on)

37 ns

t

ri

85 ns

E

on

6.5 mJ

t

d(off)

175 ns

t

fi

125 ns

E

off

5.0 mJ

R

thJC

0.092 °C/W

R

thCS

0.15 °C/W

Inductive load, T

J

= 25°C

I

C

= 100A, V

GE

= 15V

V

CE

= 0.5 • V

CES

, R

G

= 1Ω

Note 2

Inductive load, T

J

= 150°C

I

C

= 100A, V

GE

= 15V

V

CE

= 0.5 • V

CES

, R

G

= 1Ω

Note 2

TO-264 Outline

Terminals: 1 = Gate

2,4 = Collector

3 = Emitter

Terminals: 1 - Gate

2 - Collector

3 - Emitter

PLUS247

TM

Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

A

1

2.29 2.54 .090 .100

A

2

1.91 2.16 .075 .085

b 1.14 1.40 .045 .055

b

1

1.91 2.13 .075 .084

b

2

2.92 3.12 .115 .123

C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC

L 19.81 20.32 .780 .800

L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 0.244

R 4.32 4.83 .170 .190

IXYK140N90C3

IXYX140N90C3

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

40

80

120

160

200

240

280

0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

12V

8V

9V

10V

6V

11V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

350

024681012141618

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

12V

8V

10V

9V

7V

11V

Fig. 3. Output Characteristics @ T

J

= 150ºC

0

40

80

120

160

200

240

280

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

12V

11V

9V

8V

7V

10V

6V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 140A

I

C

= 70A

I

C

= 280A

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

1

2

3

4

5

6

7

8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 280

A

T

J

= 25ºC

140

A

70

A

Fig. 6. Input Admittance

0

20

40

60

80

100

120

140

160

180

200

4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10

V

GE

- Volts

I

C

-

Amperes

T

J

= 150ºC

25ºC

- 40ºC

IXYX140N90C3

IXYX140N90C3

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