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IXYX140N90C3
P1-P3
P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYK140N90C3
IXYX140N90C3
Fig. 7. Trans
conduc
t
anc
e
0
20
40
60
80
100
120
0
20
40
60
80
100
120
140
160
180
200
I
C
- Am
p
eres
g
f s
-
Si
emens
T
J
= -
40ºC, 2
5ºC, 150ºC
Fi
g.
10. R
everse-
Bi
as Safe Oper
atin
g
Area
0
50
100
150
200
250
300
100
200
300
400
500
600
700
800
900
V
CE
- Vo
l
ts
I
C
- Amper
es
T
J
= 1
50ºC
R
G
= 1
Ω
dv
/ dt < 10
V
/ n
s
Fi
g.
11. Maxim
um
T
r
ansi
ent
T
h
erm
al
Im
ped
ance
0.00
01
0.001
0.01
0.1
0.000
01
0.0
001
0.0
01
0.01
0.1
1
10
Puls
e
W
idt
h -
S
e
c
o
nds
Z
(th)JC
-
ºC
/ W
Fig. 8. G
a
te
Cha
rge
0
2
4
6
8
10
12
14
16
0
50
100
15
0
200
250
3
00
350
Q
G
- Nan
oCou
l
om
bs
V
GE
- Volt
s
V
CE
= 4
50V
I
C
= 140A
I
G
= 10mA
Fig. 9. Ca
pac
it
anc
e
100
1,000
10,
000
100,
000
0
5
10
15
20
25
30
35
40
V
CE
- Vol
ts
Capacit
ance - Pi
coFarads
f
= 1 MH
z
C
ies
C
oes
C
res
© 2013 IXYS CORPORATION, All Rights Reserved
IXYK140N90C3
IXYX140N90C3
Fig. 12
. Induct
iv
e S
wit
ch
ing Ene
rgy Los
s v
s
.
Gate Resistance
1
2
3
4
5
6
7
8
12
34
5678
9
1
0
R
G
- Oh
m
s
E
off
- M
illiJ
o
u
les
2
3
4
5
6
7
8
9
E
on
- M
illiJ
o
u
les
E
off
E
on
- - - -
T
J
= 150ºC ,
V
GE
= 15V
V
CE
= 4
50
V
I
C
= 50A
I
C
= 100A
Fi
g
. 15.
In
d
ucti
ve T
ur
n
-off
Switc
hi
ng
T
i
m
es vs.
Gate R
esista
nce
60
80
100
120
140
160
180
200
220
240
260
12
345
678
9
1
0
R
G
- Oh
m
s
t
f i
- Nanoseconds
140
160
180
200
220
240
260
280
300
320
340
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 150ºC,
V
GE
= 15
V
V
CE
= 4
50
V
I
C
= 100A
I
C
= 50
A
Fi
g.
13.
In
du
cti
ve Swi
tchi
ng
En
erg
y L
oss vs.
Collec
t
or Curre
nt
1
2
3
4
5
6
50
55
60
65
70
75
80
85
90
95
100
I
C
- Am
p
eres
E
off
- M
illiJ
o
u
les
0
2
4
6
8
10
E
on
- M
illiJ
o
u
les
E
off
E
on
- - - -
R
G
= 1
Ω
,
V
GE
= 15V
V
CE
= 4
50
V
T
J
= 150ºC
T
J
= 25
º
C
Fig. 14
. Induct
ive
S
wit
ching E
ne
rgy Los
s v
s
.
Junc
tion Tem
perature
0
1
2
3
4
5
6
7
8
25
50
75
100
125
150
T
J
- Deg
rees Cen
ti
g
rad
e
E
off
- M
illiJ
o
u
les
0
1
2
3
4
5
6
7
8
E
on
- M
illiJ
o
u
les
E
off
E
on
- - - -
R
G
= 1
Ω
,
V
GE
= 15
V
V
CE
= 45
0V
I
C
= 50
A
I
C
= 100A
Fig. 1
6.
Induct
iv
e
T
urn-
off
S
wit
ching T
im
es v
s
.
Collec
tor Curre
nt
50
75
100
125
150
175
200
225
250
50
55
60
65
70
75
80
85
90
95
100
I
C
- A
m
pe
res
t
f i
- Nanoseconds
100
120
140
160
180
200
220
240
260
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1
Ω
, V
GE
= 15
V
V
CE
= 4
50
V
T
J
=
150ºC
T
J
= 25º
C
Fig. 17
. Inductiv
e Turn-of
f
Sw
it
ch
ing T
im
es
vs
.
Jun
cti
on
T
e
m
per
atu
re
60
80
100
120
140
160
180
200
25
50
75
100
125
150
T
J
-
D
e
gr
e
e
s
C
e
nt
i
gr
a
de
t
f i
- Nanoseconds
120
140
160
180
200
220
240
260
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1
Ω
, V
GE
= 15
V
V
CE
= 450V
I
C
= 100A
I
C
= 50
A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYK140N90C3
IXYX140N90C3
IXYS REF: IXY_140N90C3(91)03-26-12-A
Fig. 19
. Induct
ive Turn-on Sw
it
ch
ing T
im
es
vs
.
Collec
t
or Curre
nt
0
20
40
60
80
100
120
50
55
60
65
70
75
80
85
90
95
100
I
C
- A
m
per
es
t
r i
- Nanoseconds
32
34
36
38
40
42
44
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 1
Ω
, V
GE
= 15V
V
CE
=
450V
T
J
= 25ºC, 150ºC
Fig. 20
. Induct
ive
Tur
n-on S
wit
ching Tim
es
vs
.
Jun
cti
on
T
em
p
eratu
r
e
0
20
40
60
80
100
120
140
25
50
75
100
125
150
T
J
-
D
e
gr
ee
s
C
e
ntigr
a
de
t
r i
- Nanoseconds
24
28
32
36
40
44
48
52
t
d
(
on
)
- Nan
ose
co
nd
s
t
r i
t
d(on)
- - - -
R
G
= 1
Ω
, V
GE
= 15
V
V
CE
= 45
0
V
I
C
= 100A
I
C
= 50A
Fig. 18
. Inductiv
e T
urn-on Swit
ching Tim
es v
s.
Gate R
esi
stance
0
20
40
60
80
100
120
140
160
12
345
678
9
1
0
R
G
- Oh
m
s
t
r i
- Nan
ose
con
ds
16
24
32
40
48
56
64
72
80
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 150ºC,
V
GE
= 15V
V
CE
= 450V
I
C
= 50
A
I
C
= 100A
P1-P3
P4-P6
IXYX140N90C3
Mfr. #:
Buy IXYX140N90C3
Manufacturer:
Littelfuse
Description:
IGBT Transistors DISC IGBT XPT-GENX3
Lifecycle:
New from this manufacturer.
Delivery:
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EMS
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IXYX140N90C3
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