HEXFET
®
Power MOSFET
Specifically designed for Automotive applications, these
HEXFET
®
Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal
in a variety of power applications. This dual, surface mount
SO-8 can dramatically reduce board space and is also available
in Tape & Reel.
Absolute Maximum Ratings
Description
03/25/09
www.irf.com 1
Advanced Process Technology
Dual N-Channel MOSFET
Ultra Low On-Resistance
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Automotive [Q101] Qualified
Benefits
Typical Applications
Anti-lock Braking Systems (ABS)
Electronic Fuel Injection
Power Doors, Windows & Seats
AUTOMOTIVE MOSFET
PD - 93944D
IRF7103Q
V
DSS
R
DS(on)
max (mW) I
D
50V 130@V
GS
= 10V 3.0A
200@V
GS
= 4.5V 1.5A
Symbol Parameter Typ. Max. Units
R
θJL
Junction-to-Drain Lead ––– 20
R
θJA
Junction-to-Ambient ––– 62.5 °C/W
Thermal Resistance
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 4.5V 3.0
I
D
@ T
C
= 70°C Continuous Drain Current, V
GS
@ 4.5V 2.5 A
I
DM
Pulsed Drain Current 25
P
D
@T
C
= 25°C Power Dissipation 2.4 W
Linear Derating Factor 16 mW/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 22 mJ
I
AR
Avalanche Current See Fig.16c, 16d, 19, 20 A
E
AR
Repetitive Avalanche Energy mJ
dv/dt Peak Diode Recovery dv/dt 12 V/ns
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 175 °C
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
SO-8
