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IRF7103Q

P1-P3P4-P6P7-P9P10-P10
IRF7103Q
4 www.irf.com
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 175 C
J
°
T = 25 C
J
°
0 1 10 100 1000
V
DS
, Drain-toSource Voltage (V)
0.01
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
0 3 6 9 12
0
3
6
9
12
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I
=
D
2.0A
V = 10V
DS
V = 25V
DS
V = 40V
DS
1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cos s
Crs s
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
IRF7103Q
www.irf.com 5
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
25 50 75 100 125 150 175
0.0
0.6
1.2
1.8
2.4
3.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
t
1
, Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
A
)
°
C
/
W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
A
IRF7103Q
6 www.irf.com
Fig 13. Typical On-Resistance Vs. Drain
Current
Fig 12. Typical On-Resistance Vs. Gate
Voltage
Fig 14. Typical Threshold Voltage Vs.
Junction Temperature
Fig 15. Typical Power Vs. Time
4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0
-V
GS,
Gate -to -Source Voltage (V)
0.09
0.10
0.11
0.12
0.13
0.14
0.15
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
Ω
)
I
D
= 3.0A
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Temperature ( °C )
1.0
1.3
1.5
1.8
2.0
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
0 5 10 15 20 25 30 35 40
I
D
, Drain Current (A)
0.000
0.500
1.000
1.500
2.000
2.500
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
Ω
)
V
GS
= 10V
V
GS
= 4. 5V
1.00 10.00 100.00 1000.00
Time (sec)
0
10
20
30
40
50
60
70
P
o
w
e
r
(
W
)
P1-P3P4-P6P7-P9P10-P10

IRF7103Q

Mfr. #:
Buy IRF7103Q
Manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 50V 3A 8-SOIC
Lifecycle:
New from this manufacturer.
Delivery:
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