GTL2005_6 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 06 — 6 September 2007 5 of 19
NXP Semiconductors
GTL2005
Quad GTL/GTL+ to LVTTL/TTL bidirectional non-latched translator
8. Limiting values
[1] Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only
and functional operation of the device at these or any other conditions beyond those indicated under
Section 9 “Recommended operating conditions” is not implied. Exposure to absolute-maximum-rated
conditions for extended periods may affect device reliability.
[2] The performance capability of a high-performance integrated circuit in conjunction with its thermal
environment can create junction temperatures which are detrimental to reliability. The maximum junction
temperature of this integrated circuit should not exceed 150 °C.
[3] The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings
are observed.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Voltages are referenced to GND (ground=0V).
Symbol Parameter Conditions Min Max Unit
V
CC
DC supply voltage −0.5 +4.6 V
I
IK
DC input diode current V
I
<0V - −50 mA
V
I
DC input voltage A port −0.5
[3]
+7.0 V
B port −0.5
[3]
+4.6 V
I
OK
DC output diode current V
O
<0V - −50 mA
V
O
DC output voltage output in OFF or
HIGH state; A port
−0.5
[3]
+7.0 V
output in OFF or
HIGH state; B port
−0.5
[3]
+4.6 V
I
OL
current into any output in
the LOW state
B port - 128 mA
A port - 80 mA
I
OH
current into any output in
the HIGH state
B port - −64 mA
T
stg
storage temperature range
[2]
−60 +150 °C
