IRF5803PbF
2 2017-01-27
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400µs; duty cycle 2%.
Surface mounted on 1 in square Cu board
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -40 ––– ––– V V
GS
= 0V, I
D
= -250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– -0.03 ––– V/°C Reference to 25°C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance
––– ––– 112
m
V
GS
= -10V, I
D
= -3.4A
––– ––– 190 V
GS
= -4.5V, I
D
= -2.7A
V
GS(th)
Gate Threshold Voltage -1.0 ––– - 3.0 V V
DS
= V
GS
, I
D
= -250µA
gfs Forward Trans conductance 4.0 ––– ––– S V
DS
= -10V, I
D
= -3.4A
I
DSS
Drain-to-Source Leakage Current
––– ––– -10
µA
V
DS
= -32V, V
GS
= 0V
––– ––– -25 V
DS
= -32V,V
GS
= 0V,T
J
= 150°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– -100
nA
V
GS
= -20V
Gate-to-Source Reverse Leakage ––– ––– 100 V
GS
= 20V
Q
g
Total Gate Charge ––– 25 37
I
D
= -3.4A
Q
gs
Gate-to-Source Charge ––– 4.5 6.8
V
DS
= -20V
Q
gd
Gate-to-Drain (‘Miller’) Charge ––– 3.5 5.3
V
GS
= -10V
t
d(on)
Turn-On Delay Time ––– 43 –––
ns
V
DD
= -20V
t
r
Rise Time ––– 550 –––
I
D
= -1.0A
t
d(off)
Turn-Off Delay Time ––– 88 –––
R
G
= 6.0
t
f
Fall Time ––– 50 –––
V
GS
= -10V
C
iss
Input Capacitance ––– 1110 –––
pF
V
GS
= 0V
C
oss
Output Capacitance ––– 93 –––
V
DS
= -25V
C
rss
Reverse Transfer Capacitance ––– 73 –––
ƒ = 100KHz
nC
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– -2.0
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– -27
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– -1.2 V T
J
= 25°C,I
S
= -2.0A,V
GS
= 0V
t
rr
Reverse Recovery Time ––– 27 40 ns
T
J
= 25°C ,I
F
= -2.0A
Q
rr
Reverse Recovery Charge ––– 34 50 nC
di/dt = 100A/µs
