IRF5803PbF
4 2017-01-27
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1 10 100
V
DS
, Drain-to-Source Voltage (V)
0
500
1000
1500
2000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 100 KHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0 5 10 15 20 25 30
0
2
4
6
8
10
12
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D
-3.4A
V =-20V
DS
V =-32V
DS
0.1
1
10
100
0.4 0.8 1.2 1.6
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
1 10 100
-V
DS
, Drain-toSource Voltage (V)
0.1
1
10
100
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
A
= 25°C
T
J
= 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
