13
LT1511
APPLICATIONS INFORMATION
WUU
U
Figure 7. Lower V
BOOST
P
AVV
V
V
W
DRIVER
=
()()()
+
()
=
384331
33
30
55 15
011
..
.
.
The average I
VX
required is:
P
V
W
V
mA
DRIVER
X
==
011
33
34
.
.
Fused-lead packages conduct most of their heat out the
leads. This makes it very important to provide as much PC
board copper around the leads as is practical. Total
thermal resistance of the package-board combination is
dominated by the characteristics of the board in the
immediate area of the package. This means both lateral
thermal resistance across the board and vertical thermal
resistance through the board to other copper layers. Each
layer acts as a thermal heat spreader that increases the
heat sinking effectiveness of extended areas of the board.
Total board area becomes an important factor when the
area of the board drops below about 20 square inches. The
graph in Figure 8 shows thermal resistance vs board area
for 2-layer and 4-layer boards with continuous copper
planes. Note that 4-layer boards have significantly lower
thermal resistance, but both types show a rapid increase
for reduced board areas. Figure 9 shows actual measured
lead temperatures for chargers operating at full current.
Battery voltage and input voltage will affect device power
dissipation, so the data sheet power calculations must be
used to extrapolate these readings to other situations.
Vias should be used to connect board layers together.
Planes under the charger area can be cut away from the
rest of the board and connected with vias to form both a
For example, V
X
= 3.3V then:
P 3.5mA V 1.5mA V
V
V
7.5mA 0.012 I
P
IV
55 V
P
IRV
V
tVI f
BIAS IN BAT
BAT
2
IN
BAT
DRIVER
BAT BAT
2
IN
SW
BAT
2
SW BAT
IN
OL IN BAT
=
()()
+
()
+
()
+
()()
[]
=
()( )
+
()
=
()()( )
+
()()( )()
1
30
V
BAT
R
SW
= Switch ON resistance 0.16
t
OL
= Effective switch overlap time 10ns
f = 200kHz
Example: V
IN
= 15V, V
BAT
= 8.4V, I
BAT
= 3A;
P 3.5mA 15 1.5mA 8.4
8.4
15
7.5mA 0.012 3 0.27W
P
3 8.4
5515
0.33W
P
3 0.16 8.4
15
10 15 3 200kHz
0.81 0.09 0.9W
BIAS
2
DRIVER
2
SW
2
9
=
()()
+
()
+
()
+
()()
[]
=
=
()( )
+
()
=
=
()( )( )
+
()()( )
=+=
1
84
30
.
Total Power in the IC is: 0.27 + 0.33 + 0.9 = 1.5W
Temperature rise will be (1.5W)(30°C/W) = 45°C. This
assumes that the LT1511 is properly heat sunk by con-
necting the seven fused ground pins to expanded traces
and that the PC board has a backside or internal plane for
heat spreading.
The P
DRIVER
term can be reduced by connecting the boost
diode D2 (see Figure 1) to a lower system voltage (lower
than V
BAT
) instead of V
BAT
.
Then P
DRIVER
=
()( )()
+
()
IVV
V
V
BAT BAT X
X
IN
1
30
55
SW
BOOST
SPIN
1511 • F07
LT1511
V
X
I
VX
C2
D2
10µF
L1
+
14
LT1511
APPLICATIONS INFORMATION
WUU
U
low thermal resistance system and to act as a ground
plane for reduced EMI.
Glue-on, chip-mounted heat sinks are effective only in
moderate power applications where the PC board copper
cannot be used, or where the board size is small. They
offer very little improvement in a properly laid out multi-
layer board of reasonable size.
Higher Duty Cycle for the LT1511 Battery Charger
Maximum duty cycle for the LT1511 is typically 90%, but
this may be too low for some applications. For example, if
an 18V ±3% adapter is used to charge ten NiMH cells, the
charger must put out 15V maximum. A total of 1.6V is lost
in the input diode, switch resistance, inductor resistance
and parasitics, so the required duty cycle is 15/16.4 =
91.4%. As it turn out, duty cycle can be extended to 93%
by restricting boost voltage to 5V instead of using V
BAT
as
is normally done. This lower boost voltage also reduces
power dissipation in the LT1511, so it is a win-win deci-
sion. Connect an external source of 3V to 6V at V
X
node in
Figure 10 with a 10µF C
X
bypass capacitor.
Even Lower Dropout
For even lower dropout and/or reducing heat on the board,
the input diode D3 should be replaced with a FET (see
Figure 11). It is pretty straightforward to connect a
P-channel FET across the input diode and connect its gate
to the battery so that the FET commutates off when the
input goes low. The problem is that the gate must be
pumped low so that the FET is fully turned on even when
the input is only a volt or two above the battery voltage.
Also there is a turn-off speed issue. The FET should turn
Figure 9. LT1511 Lead Temperature
BOARD AREA (IN
2
)
0
45
40
35
30
25
20
15
10
15 25
LT1511 • F08
510
20 30 35
THERMAL RESISTANCE (°C/W)
MEASURED FROM AIR AMBIENT
TO DIE USING COPPER LANDS
AS SHOWN ON DATA SHEET
2-LAYER BOARD
4-LAYER BOARD
Figure 8. LT1511 Thermal Resistance
BOARD AREA (IN
2
)
0
110
100
90
80
70
60
50
40
15 25
LT1511 • F09
510
20 30 35
LEAD TEMPERATURE (°C)
V
IN
= 16V
V
BAT
= 8.4V
I
CHRG
= 3A
T
A
= 25°C
NOTE: PEAK DIE TEMPERATURE WILL BE
ABOUT 10°C HIGHER THAN LEAD TEMPER-
ATURE AT 3A CHARGING CURRENT
2-LAYER BOARD
4-LAYER BOARD
4-LAYER BOARD
WITH V
BOOST
= 3.3V
SW
BOOST
SPIN
SENSE BAT
V
BAT
C3
0.47µF
D2
LT1511
SW
BOOST
SPIN
SENSE BAT
V
X
3V TO 6V
C
X
10µF
V
BAT
1511 F10
C3
0.47µF
D2
LT1511
STANDARD CONNECTION HIGH DUTY CYCLE CONNECTION
+ +
V
IN
SW
BOOST
SPIN
SENSE BAT
V
CC
V
X
3V TO 6V
C
X
10µF
V
BAT
1511 F11
C2
0.47µF
D2
D1
R
X
50k
Q2
Q1
LT1511
HIGH DUTY CYCLE CONNECTION
Q1 = Si4435DY
Q2 = TP0610L
+
+
Figure 11. Replacing the Input Diode
Figure 10. High Duty Cycle
15
LT1511
APPLICATIONS INFORMATION
WUU
U
off instantly when the input is dead shorted to avoid large
current surges from the battery back through the charger
into the FET. Gate capacitance slows turn-off, so a small
P-channel (Q2) is to discharge the gate capacitance quickly
in the event of an input short. The body diode of Q2 creates
the necessary pumping action to keep the gate of Q1 low
during normal operation. Note that Q1 and Q2 have a V
GS
spec limit of 20V. This restricts V
IN
to a maximum of 20V.
For low dropout operation with V
IN
> 20V consult factory.
Optional Connection of Input Diode and
Current Sense Resistor
The typical application shown in Figure 1 on the first page
of this data sheet shows a single diode to isolate the V
CC
pin from the adapter input. This simple connection may be
unacceptable in situations where the main system power
must be disconnected from both the battery
and
the
adapter under some conditons. In particular, if the adapter
is disconnected or turned off and it is desired to also
Figure 13. High Speed Switching Path
LT1511 • F13
V
BAT
L1
V
IN
HIGH
FREQUENCY
CIRCULATING
PATH
BAT
SWITCH NODE
C
IN
C
OUT
D1
SW
L1
CLP
CLN
ADAPTER
IN
TO
SYSTEM
POWER
R
S1
C
IN
R
S4
R7
500
C1
1µF
D3
LT1511
PARASITIC
INTERNAL
DIODE
V
CC
1511 F12a
+
+
Figure 12a. Standard Connection
1511 F12b
SW
L1
CLP
CLN
ADAPTER
IN
TO
SYSTEM
POWER
R
S1
C
IN
R
S4
R7
500
C1
1µF
D4
D3
LT1511
PARASITIC
INTERNAL
DIODE
V
CC
+
+
Figure 12b. Modified Input Diode Connection
disconnect the system load from the battery, the system
will remain powered through the parasitic diode from the
SW pin to the V
CC
pin.
The circuit in Figure 12b allows system power to go to 0V
without drawing battery current by adding an additional
diode, D4. To ensure proper operation, the LT1511 current
sense amplifier inputs (CLP and CLN) were designed to
work above V
CC
and not to draw current from V
CC
when the
inputs are pulled to ground by a powered-down adapter.
Layout Considerations
Switch rise and fall times are under 10ns for maximum
efficiency. To prevent radiation, the catch diode, SW pin
and input bypass capacitor leads should be kept as short
as possible. A ground plane should be used under the
switching circuitry to prevent interplane coupling and to
act as a thermal spreading path. All ground pins should be
connected to expanded traces for low thermal resistance.
The fast-switching high current ground path, including the
switch, catch diode and input capacitor, should be kept
very short. Catch diode and input capacitor should be
close to the chip and terminated to the same point. This
path contains nanosecond rise and fall times with several
amps of current. The other paths contain only DC and/or
200kHz tri-wave and are less critical. Figure 13 indicates
the high speed, high current switching path. Figure 14
shows critical path layout. Contact Linear Technology for
an actual LT1511 circuit PCB layout or Gerber file.
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.

LT1511ISW#PBF

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
Battery Management 3A Step-Down Battery Charger
Lifecycle:
New from this manufacturer.
Delivery:
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