AON2260
Symbol Min Typ Max Units
BV
DSS
60 V
V
DS
=60V, V
GS
=0V 1
T
J
=55°C 5
The AON2260 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R
±100 nA
V
GS(th)
Gate Threshold Voltage
1.5 2 2.5 V
I
D(ON)
30 A
36 44
T
J
=125°C 61.5 75
42 53 mΩ
g
FS
21 S
V
SD
0.75 1 V
I
S
3.5 A
C
iss
426 pF
C
oss
50 pF
C
rss
5 pF
R
g
1 2.3 3.5 Ω
Q
g
(10V) 6.1 12 nC
Q
g
(4.5V) 2.6 6 nC
Q
gs
1.2 nC
Q
gd
0.8 nC
t
D(on)
3 ns
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=30V, f=1MHz
SWITCHING PARAMETERS
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=30V, I
D
=6A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Zero Gate Voltage Drain Current
Gate-Body leakage current
mΩ
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=6A
Forward Transconductance
Diode Forward Voltage
V
GS
=4.5V, I
D
=4A
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=6A
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
µA
V
DS
=V
GS，
I
D
=250µA
V
DS
=0V, V
GS
=±20V
r
t
D(off)
15 ns
t
f
1.5 ns
t
rr
27 ns
Q
rr
12
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
I
F
=6A, dI/dt=100A/µs
Turn-Off DelayTime
I
F
=6A, dI/dt=100A/µs
GS
DS
L
R
GEN
=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
Rev 0 : Dec. 2011 www.aosmd.com Page 2 of 5
