AON2260

AON2260
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
1
10
100
1000
10000
1E-05 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
0
2
4
6
8
10
0 1 2 3 4 5 6
V
GS
(Volts)
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
100
200
300
400
500
600
0 10 20 30 40 50 60
Capacitance (pF)
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
iss
C
oss
C
rss
V
DS
=30V
I
D
=6A
T
J(Max)
=150°C
T
A
=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100 1000
I
D
(Amps)
V
DS
(Volts)
Figure 9: Maximum Forward Biased
10
µ
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
100
µ
s
Ambient (Note H)
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Safe Operating Area (Note F)
R
θJA
=80°C/W
Rev 0 : Dec. 2011 www.aosmd.com Page 4 of 5
AON2260
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs
Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT
Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
+
L
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
+
VDC
Vgs
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev 0 : Dec. 2011 www.aosmd.com Page 5 of 5

AON2260

Mfr. #:
Manufacturer:
Description:
MOSFET N CH 60V 6A DFN 2x2B
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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