FDT55AN06LA0 Datasheet FDT55AN06LA0 | P1-P3

tm

February 2008

FDT55AN06LA0 N-Channel PowerTrench

®

MOSFET

FDT55AN06LA0 Rev. A

www.fairchildsemi.com1

FDT55AN06LA0

N-Channel PowerTrench

®

MOSFET

60V, 11A, 55m:

Features

•R

DS(on)

= 44m: ( Typ.)@ V

GS

= 5V, I

D

= 11A

•Q

g(tot)

= 7.6nC( Typ.),@ V

GS

= 5V.

• Low Miller Charge

• Low Q

RR

Body Diode

• UIS Capability

• RoHS compliant

Applications

• Motor / Body load control

• Power train management

• DC-AC converters

• Distributed power architectures and VRMs

D

G

S

G

D

S

D

SOT-223

MOSFET Maximum Ratings T

C

= 25

o

C unless otherwise noted

Thermal Characteristics

Symbol Parameter Ratings Units

V

DSS

Drain to Source Voltage 60 V

V

GSS

Gate to Source Voltage ±20 V

I

D

Drain Current

-Continuous (T

C

= 25

o

C, V

GS

= 10V) 12.1

A-Continuous (T

C

= 25

o

C, V

GS

= 5V) 11

-Continuous (T

C

= 10

o

C, V

GS

= 5V) 7

I

DM

Drain Current - Pulsed (Note 1) 36 A

E

AS

Single Pulsed Avalanche Energy (Note 2) 34 mJ

P

D

Power Dissipation

(T

C

= 25

o

C) 8.9 W

- Derate above 25

o

C 0.071 W/

o

C

T

J

, T

STG

Operating and Storage Temperature Range -55 to +150

o

C

T

L

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

o

C

Symbol Parameter Ratings Units

R

TJC

Thermal Resistance, Junction to Case 14

o

C/W

R

TJA

Thermal Resistance, Junction to Ambient 100

*When mounted on the minimum pad size recommended (PCB Mount)

FDT55AN06LA0 N-Channel PowerTrench

®

MOSFET

FDT55AN06LA0 Rev. A

www.fairchildsemi.com

2

Package Marking and Ordering Information T

C

= 25

o

C unless otherwise noted

Electrical Characteristics

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Device Marking Device Package Reel Size Tape Width Quantity

FDT55AN06LA0 FDT55AN06LA0 SOT-223 330mm 12mm 4000

Symbol Parameter Test Conditions Min. Typ. Max. Units

BV

DSS

Drain to Source Breakdown Voltage I

D

= 250PA, V

GS

= 0V, T

J

= 25

o

C60 - - V

I

DSS

Zero Gate Voltage Drain Current

V

DS

= 50V, V

GS

= 0V - - 1

PA

V

DS

= 50V, T

C

= 150

o

C - - 250

I

GSS

Gate to Body Leakage Current V

GS

= ±20V, V

DS

= 0V - - ±100 nA

V

GS(th)

Gate Threshold Voltage V

GS

= V

DS

, I

D

= 250PA1.0-3.0V

R

DS(on)

Static Drain to Source On Resistance

V

GS

= 10V, I

D

= 11A

V

DS

= 5V, I

D

= 11A

-

36

44

46

55

m:

C

iss

Input Capacitance

V

DS

= 25V, V

GS

= 0V

f = 1MHz

- 849 1130 pF

C

oss

Output Capacitance - 88 115 pF

C

rss

Reverse Transfer Capacitance - 37 55 pF

t

ON

Turn-On Time

V

DD

= 30V, I

D

= 11A

V

GS

= 5V, R

GS

= 18:

-3478ns

t

d(on)

Turn-On Delay Time - 10 30 ns

t

r

Turn-On Rise Time - 24 58 ns

t

d(off)

Turn-Off Delay Time - 23 56 ns

t

f

Turn-Off Fall Time - 12 34 ns

t

OFF

Turn-Off Time -3580ns

Q

g(tot)

Total Gate Charge at 10V

V

DS

= 30V, I

D

= 11A

V

GS

= 0V to 5V

- 7.6 10 nC

Q

gs

Gate to Source Gate Charge - 2.8 - nC

Q

gd

Gate to Drain “Miller” Charge - 2.7 - nC

I

S

Maximum Continuous Drain to Source Diode Forward Current - - 12 A

I

SM

Maximum Pulsed Drain to Source Diode Forward Current - - 36 A

V

SD

Drain to Source Diode Forward Voltage V

GS

= 0V, I

SD

= 11A - - 1.25 V

t

rr

Reverse Recovery Time

V

GS

= 0V, I

SD

= 11A

dI

F

/dt = 100A/Ps

-25-ns

Q

rr

Reverse Recovery Charge - 27 - nC

Notes:

1: Repetitive Rating: Pulse width limited by maximum junction temperature

2: L = 0.21mH, I

AS

= 18A, V

DD

= 50V, R

G

= 25:, Starting T

J

= 25°C

3: I

SD

d11A, di/dt d200A/Ps, V

DD

dBV

DSS

, Starting T

J

= 25°C

4: Pulse Test: Pulse width d300Ps, Duty Cycle d2%

5: Essentially Independent of Operating Temperature Typical Characteristics

FDT55AN06LA0 N-Channel PowerTrench

®

MOSFET

FDT55AN06LA0 Rev. A

www.fairchildsemi.com

3

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

2.02.53.03.54.0

1

10

-55

o

C

150

o

C

*Notes:

1. V

DS

= 20V

2. 250

Ps Pulse Test

25

o

C

I

D

,Drain Current[A]

V

GS

,Gate-Source Voltage[V]

40

0.01 0.1 1

0.1

1

10

2

*Notes:

1. 250

Ps Pulse Test

2. T

C

= 25

o

C

V

GS

= 20 V

15 V

10 V

8 V

7 V

6 V

5 V

4 V

3 V

I

D

,Drain Current[A]

V

DS

,Drain-Source Voltage[V]

30

0.00.51.01.5

0.1

1

10

*Notes:

1. V

GS

= 0V

2. 250

Ps Pulse Test

150

o

C

I

S

, Reverse Drain Current [A]

V

SD

, Body Diode Forward Voltage [V]

25

o

C

40

0 10203040

20

25

30

35

40

45

50

*Note: T

C

= 25

o

C

V

GS

= 20V

V

GS

= 10V

R

DS(ON)

[m:],

Drain-Source On-Resistance

I

D

, Drain Current [A]

0.1 1 10

0

200

400

600

800

1000

1200

1400

C

oss

C

iss

C

iss

= C

gs

+ C

gd

(C

ds

= shorted)

C

oss

= C

ds

+ C

gd

C

rss

= C

gd

*Note:

1. V

GS

= 0V

2. f = 1MHz

C

rss

Capacitances [pF]

V

DS

, Drain-Source Voltage [V]

30

0246810

0

2

4

6

8

10

*Note: I

D

= 11A

V

DS

= 12V

V

DS

= 30V

V

DS

= 48V

V

GS

, Gate-Source Voltage [V]

Q

g

, Total Gate Charge [nC]

FDT55AN06LA0

FDT55AN06LA0

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