OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

FDT55AN06LA0

P1-P3P4-P6P7-P8
FDT55AN06LA0 N-Channel PowerTrench
®
MOSFET
FDT55AN06LA0 Rev. A
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
*Notes:
1. V
GS
= 0V
2. I
D
= 250PA
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [
o
C]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
*Notes:
1. V
GS
= 10V
2. I
D
= 11A
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
1 10 100
0.01
0.1
1
10
100
20Ps
100Ps
1ms
10ms
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
DC
25 50 75 100 125 150
0
2
4
6
8
10
12
I
D
, Drain Current [A]
T
C
, Case Temperature [
o
C]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0.01
0.1
1
10
0.01
0.1
0.2
0.05
0.02
*Notes:
1. Z
TJC
(t) = 14
o
C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
TJC
(t)
0.5
Single pulse
Thermal Response [Z
TJC
]
Rectangular Pulse Duration [sec]
30
t
1
P
DM
t
2
FDT55AN06LA0 N-Channel PowerTrench
®
MOSFET
FDT55AN06LA0 Rev. A
www.fairchildsemi.com
5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDT55AN06LA0 N-Channel PowerTrench
®
MOSFET
FDT55AN06LA0 Rev. A
www.fairchildsemi.com
6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
V
DS
+
_
Driver
R
G
Sam e Type
as D U T
V
GS
• dv/dt controlled by R
G
•I
SD
controlled by pulse period
V
DD
L
I
SD
10V
V
GS
( D riv e r )
I
SD
( D U T )
V
DS
( DUT )
V
DD
Body D iode
Forw ard Volta
g
e D ro
p
V
SD
I
FM
, Body D iode Forw ard C urrent
Body D iode R everse C urrent
I
RM
Body D iode R ecovery dv/dt
di/dt
D =
G ate Pulse W idth
Gate Pulse Period
--------------------------
DUT
V
DS
+
_
Driver
R
G
Sam e Type
as D U T
V
GS
• dv/dt controlled by R
G
•I
SD
controlled by pulse period
V
DD
LL
I
SD
10V
V
GS
( D riv e r )
I
SD
( D U T )
V
DS
( DUT )
V
DD
Body D iode
Forw ard Volta
g
e D ro
p
V
SD
I
FM
, Body D iode Forw ard C urrent
Body D iode R everse C urrent
I
RM
Body D iode R ecovery dv/dt
di/dt
D =
G ate Pulse W idth
Gate Pulse Period
--------------------------
D =
G ate Pulse W idth
Gate Pulse Period
--------------------------
P1-P3P4-P6P7-P8

FDT55AN06LA0

Mfr. #:
Buy FDT55AN06LA0
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 60V N-Channel PowerTrench
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet