1;3 Semiconductors Product specification
Thyristors BT152 series
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
envelope, intended for use in
applications requiring high BT152- 400R 600R 800R
bidirectional blocking voltage V
DRM
, Repetitive peak off-state 450 650 800 V
capability and high thermal cycling V
RRM
voltages
performance. Typical applications I
T(AV)
Average on-state current 13 13 13 A
include motor control, industrial and I
T(RMS)
RMS on-state current 20 20 20 A
domestic lighting, heating and static I
TSM
Non-repetitive peak on-state 200 200 200 A
switching. current
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 cathode
2 anode
3 gate
tab anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-400R -600R -800R
V
DRM
Repetitive peak off-state - 450
1
650
1
800 V
voltages
I
T(AV)
Average on-state current half sine wave; T
mb
≤ 103 ˚C - 13 A
I
T(RMS)
RMS on-state current all conduction angles - 20 A
I
TSM
Non-repetitive peak half sine wave; T
j
= 25 ˚C prior to
on-state current surge
t = 10 ms - 200 A
t = 8.3 ms - 220 A
I
2
tI
2
t for fusing t = 10 ms - 200 A
2
s
dI
T
/dt Repetitive rate of rise of I
TM
= 50 A; I
G
= 0.2 A; - 200 A/μs
on-state current after dI
G
/dt = 0.2 A/μs
triggering
I
GM
Peak gate current - 5 A
V
GM
Peak gate voltage - 5 V
V
RGM
Peak reverse gate voltage - 5 V
P
GM
Peak gate power - 20 W
P
G(AV)
Average gate power over any 20 ms period - 0.5 W
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
ak
g
123
tab
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
March 1997 1 Rev 1.200
