NXP Semiconductors Product specification
Thyristors BT152 series
Fig.1. Maximum on-state dissipation, P
tot
, versus
average on-state current, I
T(AV)
, where
a = form factor = I
T(RMS)
/ I
T(AV)
.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
10ms.
Fig.3. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.4. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤
103˚C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
0 5 10 15
0
5
10
15
20
25
a = 1.57
1.9
2.2
2.8
4
BT152
IT(AV) / A
Ptot / W
Tmb(max) / C
125
119.5
114
108.5
103
97.5
conduction
angle
form
factor
degrees
30
60
90
120
180
4
2.8
2.2
1.9
1.57
a
1 10 100 1000
0
50
100
150
200
250
BT152
Number of half cycles at 50Hz
ITSM / A
T
I
TSM
time
I
Tj initial = 25 C max
T
10
100
1000
BT152
10us 100us 1ms
10ms
T / s
ITSM / A
T
I
TSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
0.01 0.1 1 10
0
10
20
30
40
50
BT152
surge duration / s
IT(RMS) / A
-50 0 50 100 150
0
5
10
15
20
25
BT152
Tmb / C
IT(RMS) / A
103 C
-50 0 50 100 150
0.4
0.6
0.8
1
1.2
1.4
1.6
BT151
Tj / C
VGT(Tj)
VGT(25 C)
March 1997 3 Rev 1.200
